Ambipolar rubrene thin film transistors

Seo, Soonjoo; Park, Byoung-Nam; Evans, Paul G.

doi:10.1063/1.2210294

Cited by 84 publications

(67 citation statements)

References 24 publications

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“…Whilst the formation of extremely flat rubrene films with surface roughness below the molecular length scale is possible under standard preparation conditions, these samples do not provide any indication on the formation of crystalline grains [7]. The hole mobility observed in such amorphous rubrene TFT structures amounts to only 10 -5 cm 2 /Vs which renders this value comparable to other disordered materials such as polymers [8]. It therefore becomes obvious, that the preparation of crystalline films is inevitable for the fabrication of devices with sufficiently good performance.…”

Section: Introduction Polyaromatic Hydrocarbons (Pah)mentioning

confidence: 86%

Thermally and seed‐layer induced crystallization in rubrene thin films

Nothaft

Pflaum

2008

Physica Status Solidi (b)

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We have analyzed the tendency of crystallization and the thermal activation of ordering processes in rubrene thin films. As we will demonstrate, a crystalline phase with a unit cell in agreement to the bulk structure can be stabilized upon heating of amorphous rubrene layers previously capped by a sputtered SiOx layer. This encapsulation significantly enhances the thermal stability of the organic film by about 150 °C. We compared this approach with crystallization initiated by the presence of a pentacene seed layer during rubrene deposition. Thin film transistors prepared by this route showed hole mobilities of 0.01 cm2/Vs which are four orders of magnitude higher than for their amorphous counterparts. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introduction Polyaromatic Hydrocarbons (Pah)mentioning

confidence: 86%

Thermally and seed‐layer induced crystallization in rubrene thin films

Nothaft

Pflaum

2008

Physica Status Solidi (b)

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“…[1][2][3][4][5][6][7] Since vacuumdeposited thin-film rubrene usually consists of amorphous phase or is hardly crystalline, any reported field mobility of the OTFT with rubrene thin-film channel is still very inferior to those of other OTFTs with previous promising organic channels such as pentacene, tetracene, and alpha-6T. [8][9][10][11] Very recently, polycrystalline rubrene channel was reported to have a high mobility of 0.7 cm 2 / V s as prepared by a special solution treatment. 12 However, studies on rubrene thin films and devices are still lacking.…”

Section: Rubrene Thin-film Transistors With Crystalline and Amorphousmentioning

confidence: 99%

Rubrene thin-film transistors with crystalline and amorphous channels

Park

Hwang

Choi

et al. 2007

Applied Physics Letters

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The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a rubrene thin film deposited under a specific condition. The deposited film was mostly covered by amorphous rubrene matrix with smooth surface except many crystalline rubrene disks embedded with rough surface. When the channel of OTFT covers some portion of crystalline disks, the OTFT displayed a typical field effect behavior while it showed little drain current with the channel covered with amorphous background. Typical field mobility obtained from OTFT with crystalline disks was 1.23×10−4cm2∕Vs with an on/off current ratio of ∼103.

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“…Figure 2(e) shows the energy level schematic of Au and monolayer MoSe 2 with reference to vacuum (E vac ) prior to physical contact between the two. We assume 5.1 eV as the work function energy for Au, 14 the electron affinity of monolayer MoSe 2 is 3.91 eV 15 and its band gap is 1.55eV 1 with the Fermi energy lying close to the mid-gap position. 16 Band bending at the interface upon physical contact (Au/MoSe 2 ) in thermal equilibrium is anticipated to result in Schottky barriers to electron or hole transport.…”

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confidence: 99%

Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

et al. 2018

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CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET) configuration using an ionic liquid (IL) as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (∼7 μF/cm2) IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ∼2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

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Ambipolar rubrene thin film transistors

Cited by 84 publications

References 24 publications

Thermally and seed‐layer induced crystallization in rubrene thin films

Thermally and seed‐layer induced crystallization in rubrene thin films

Rubrene thin-film transistors with crystalline and amorphous channels

Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

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