Ambipolar thin-film transistors based on organic semiconductor blend

Park, Sangyun; Lee, Bohyun; Bae, Bumgyu; Chai, Jihoon; Lee, Sangchul; Kim, Choongik

doi:10.1016/j.synthmet.2019.05.001

Cited by 19 publications

(15 citation statements)

References 80 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The HOMO level of −5.1 eV for PBTTT-C 14 [ 39 ] and LUMO of −4.3 eV for PDI8-CN 2 [ 40 ] were properly aligned with the work function of gold (WF = −5.1 eV) for injection of electrons and holes into the BHJ film ( Figure 1 c). The energy gap between these levels was less than 1 eV preventing formation of the charge carrier traps at semiconductor/electrode interface [ 16 , 20 , 41 ]. It has been reported that the effective energy gap allowing charge transfer and increase in the conductivity is below 0.6 eV [ 42 , 43 ].…”

Section: Methodsmentioning

confidence: 99%

“…OFETs exhibiting charge carrier mobilities comparable to amorphous silicon (>1 cm 2 /Vs) became attractive for future applications in electronics, circumventing conventional vacuum and photolithographic fabrication processes. Especially unipolar [ 11 , 12 ] and ambipolar [ 13 , 14 , 15 , 16 ] OFETs became important for complementary logic circuits and inverters. Although most OSCs intrinsically conduct electrons and holes, the vulnerability of electron carriers to ambient conditions (i.e., the detrimental effects of O 2 and H 2 O) results in serious degradation of the n-type transport in devices [ 4 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

“…An alternative approach consists of blending two organic semiconductors into a bulk heterojunction (BHJ) morphology with phase separated p- and n-type fractions [ 16 , 21 , 22 ]. This method is used frequently not only in light emitting transistors, light-emitting diodes and photovoltaics [ 22 , 23 , 24 , 25 , 26 , 27 ], but also applied to achieve a balanced transport of electrons and holes in ambipolar OFETs [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

“…So far, BHJs have only been used to fabricate ambipolar OFETs [ 16 , 28 , 31 ] with a balanced transport of holes and electrons. In our novel approach, BHJs are exploited to control the type of unipolar conduction by tuning the blend morphology, even after device fabrication.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

et al. 2020

View full text Add to dashboard Cite

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…This observation reveals that, optimum ratio between D and A is highly anticipated to arrive at balanced ambipolar behavior. The charge carrier trapping at the interface ( D and A ) have disturbed the threshold voltage values 62 .…”

Section: Resultsmentioning

confidence: 99%

Picene and PTCDI based solution processable ambipolar OFETs

Balambiga

Dheepika

Devibala

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Facile and efficient solution-processed bottom gate top contact organic field-effect transistor was fabricated by employing the active layer of picene (donor, D) and N,N′-di(dodecyl)-perylene-3,4,9,10-tetracarboxylic diimide (acceptor, A). Balanced hole (0.12 cm2/Vs) and electron (0.10 cm2/Vs) mobility with Ion/off of 104 ratio were obtained for 1:1 ratio of D/A blend. On increasing the ratio of either D or A, the charge carrier mobility and Ion/off ratio improved than that of the pristine molecules. Maximum hole (µmax,h) and electron mobilities (µmax,e) were achieved up to 0.44 cm2/Vs for 3:1 and 0.25 cm2/Vs for 1:3, (D/A) respectively. This improvement is due to the donor phase function as the trap center for minority holes and decreased trap density of the dielectric layer, and vice versa. High ionization potential (− 5.71 eV) of 3:1 and lower electron affinity of (− 3.09 eV) of 1:3 supports the fine tuning of frontier molecular orbitals in the blend. The additional peak formed for the blends at high negative potential of − 1.3 V in cyclic voltammetry supports the molecular level electronic interactions of D and A. Thermal studies supported the high thermal stability of D/A blends and SEM analysis of thin films indicated their efficient molecular packing. Quasi-π–π stacking owing to the large π conjugated plane and the crystallinity of the films are well proved by GIXRD. DFT calculations also supported the electronic distribution of the molecules. The electron density of states (DOS) of pristine D and A molecules specifies the non-negligible interaction coupling among the molecules. This D/A pair has unlimited prospective for plentiful electronic applications in non-volatile memory devices, inverters and logic circuits.

show abstract

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Zhang

Liu

Wang

et al. 2023

Adv Elect Materials

View full text Add to dashboard Cite

A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipolar to n‐type by growing SnS with a different thickness on SnO with ambipolarity. The p‐type mobility could reach 1.77 cm2 V−1 s−1 and the switching ratio could reach 1517. The ambipolar transistor shows a V‐type transfer curve with electron channel mobility and hole mobility, respectively. The cross‐sectional transmission electron microscopy of the heterojunction interface reveals a high level of quality, which explains the method by which the working mode of the heterojunction changes. In addition, complementary metal‐oxide‐semiconductor (CMOS) inverters are successfully used with p‐type SnO transistors, n‐type SnO/SnS transistors, and ambipolar transistors. This work proposes a novel approach to preparing CMOS electrical components, as well as a new working mode for transistors, that are both simple and efficient.

show abstract

Ambipolar thin-film transistors based on organic semiconductor blend

Cited by 19 publications

References 80 publications

Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Picene and PTCDI based solution processable ambipolar OFETs

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Contact Info

Product

Resources

About