Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer

Effect of halogen species of acidic mineralizer on solubility of GaN in supercritical ammonia

“…Consequently, the appropriate mineralizer needs to be selected for promoting the crystal growth rate of GaN. Ammonium bromide (NH 4 Br) and ammonium iodide (NH 4 I) are promising mineralizers for acidic ammonothermal growth [15,16]. However, the solubility of GaN in supercritical ammonia with NH 4 Br or NH 4 I has not been reported yet.…”

Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

“…AT-GaN films were grown on a HVPE-GaN seed wafer [4] in a Pt-lined autoclave made of a Ni-based superalloy [8,[12][13][14][15]. The purpose of the lining was to prevent acid corrosion of the inner wall of the autoclave.…”

“…Recently, Dwilinski et al [10,11] fabricated bowing-free, low threading dislocation density diameter semi-transparent GaN wafers (| 2.54 and 5.08 cm) by the AT method using basic KNH 2 as a mineralizer. They demonstrated that seeded AT growth in an autoclave of Ni-based superalloy could be used to mass-produce bulk GaN single crystals [8,[10][11][12][13][14][15]. However, protection of the inner-wall of the autoclave from corrosion is difficult when using basic mineralizers.…”

“…Some researchers have succeeded in growing AT-GaN crystals using acidic NH 4 Cl mineralizer in a Pt-lined autoclave of a Ni-based superalloy [8,[12][13][14][15].However, although the Pt-lining protected the autoclave, the GaN crystals contained a very high concentration of O atoms (10 20 cm À 3 ). These O atoms may originate from moisture absorption by NH 3 and highly hygroscopic NH 4 Cl powder, or from residual H 2 O species in the autoclave and vacuum lines.…”

Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

“…In order to get bulk crystal several methods, such as high-pressure solution (HPS) technique [5], ammonothermal growth technology [6], and Na-flux method [7] were employed to get GaN substrate with high crystalline quality. Stringent growth condition and anisotropy of growth rate in different directions were the disadvantage of these methods.…”