Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

Shao, Yongliang; Zhang, Lei; Wu, Yongzhong; Chen, Xiufang; Qu, Shuang; Xu, Xiangang; Jiang, Minhua

doi:10.1016/j.jallcom.2011.02.168

Cited by 4 publications

(7 citation statements)

References 27 publications

(28 reference statements)

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“…In order to study the influence of stress in GaN crystals grown by HVPE on MGS substrates, the GaN growth process was in all cases carried out at the same growth temperature, Ga-pane growth surface, and gas flow rate. Both growth conditions A and B were used to grow GaN on a MGA substrate, and mirror-like smooth GaN films were obtained 19 30 . The stress condition in GaN grown on a MGA substrate is compressive in nature 19 , while on a MGS substrate it is tensile in nature.…”

Section: Resultsmentioning

confidence: 99%

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Zhang

Hao

et al. 2014

Sci Rep

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GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress.

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Section: Resultsmentioning

confidence: 99%

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Zhang

Hao

et al. 2014

Sci Rep

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“…in which s is the residual stress and Dw is the E 2 (high) phonon band shift. [40,41] The stress-free GaN E 2 (high) mode is located at 566.2 cm À1 . [42,43] For GaN (001), GaN (00À1) and GaN (100), the position of the E 2 (high) phonon band remains located at 567.7 cm À1 ,c orresponding to as tress of 0.348 GPa.…”

Section: Resultsmentioning

confidence: 99%

“…Ramans catteringh as been extensively applied to study IIInitridesa nd is ap rovenm ethod fors tudying stress, which is an important factor for the energy band structure and phonon vibrations. [38][39][40] Figure1cs hows the Raman spectra of the differentc rystallographic facets of the GaN crystal.O nly E 2 (high) and A 1 (LO) phononb ands are observed on GaN (001) and GaN (00À1), and otherp honon peaks disappear.M eanwhile, the A 1 (TO), E 1 (TO) and E 2 (high) phononm ode bands appear simultaneously on the GaN (100) facet. These resultsc onform to the Ramans electionr ule.…”

Section: Resultsmentioning

confidence: 99%

“…Raman scattering has been extensively applied to study III‐nitrides and is a proven method for studying stress, which is an important factor for the energy band structure and phonon vibrations . Figure c shows the Raman spectra of the different crystallographic facets of the GaN crystal.…”

Section: Resultsmentioning

confidence: 99%

“…in which σ is the residual stress and Δ ω is the E 2 (high) phonon band shift . The stress‐free GaN E 2 (high) mode is located at 566.2 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

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Intrinsic Properties of Macroscopically Tuned Gallium Nitride Single‐Crystalline Facets for Electrocatalytic Hydrogen Evolution

Chang

Sun

et al. 2019

Chemistry A European J

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The anisotropy of crystalline materials results in different physicala nd chemical properties on different facets, which warrants an in-depth investigation.M acroscopically facet-tuned,h igh-purity gallium nitride( GaN) single crystalsw ere synthesised and machined,a nd the electrocatalytic hydrogen evolution reaction( HER) wasu sed as the model reaction to show the differences among the facets. DFT calculations revealed that the Ga and Ns ites of GaN (100) had ac onsiderably smaller DG H* value than those of the metal Ga site of GaN (001) or Ns ite of GaN (00À1), therebyi ndicating that GaN (100) should be more catalyti-cally activef or the HER on accounto fi ts nonpolar facet. Subsequente xperiments testified that the electrocatalytic performance of GaN (100) was considerablym ore efficient than that of other facets for both acidic and alkalineH ERs. Moreover,t he GaN crystal with ap referentially (100) active facet had an excellently durable alkaline electrocatalytic HER for more than 10 days. This work provides fundamentali nsightsi nto the exploration of the intrinsic propertieso fm aterialsa nd designing advanced materials for physicochemical applications.

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