Ammonothermal growth of GaN crystals in alkaline solutions

Wang, Buguo; Callahan, Michael J.; Rakes, K.; Bouthillette, Lionel O.; Wang, S.-Q.; Bliss, D.; Kolis, Joseph W.

doi:10.1016/j.jcrysgro.2005.11.048

Cited by 91 publications

(74 citation statements)

References 11 publications

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“…This results from experiments, where a Ga nutrient was placed at the midpoint of an autoclave, presenting a temperature gradient with a hot and a cold zone, and observing the crystallization spot are shown. At T ≥ 723 K, GaN crystallizes in the hot zone [65,67,86]. An equivalent behavior was observed for AlN, which can be formed from Al and KNH 2 4 ], with tetrahedrally coordinated Ga, is known from synthesis in liquid ammonia [80].…”

Section: Intermediate Species Controlling Solubility and Growth Ratesmentioning

confidence: 97%

Chemistry of Ammonothermal Synthesis

2014

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Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH 2 , Zn(NH 2 ) 2 ), imides (e.g., Th(NH) 2 ), ammoniates (e.g., Ga(NH 3 ) 3 F 3 , [Al(NH 3 ) 6 ]I 3 · NH 3 ) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs 2 Te 5 ). In particular, large scale production of high quality crystals is possible, due to comparatively simple scalability of the experimental set-up. The ammonothermal method is defined as employing a heterogeneous reaction in ammonia as one homogenous fluid close to or in supercritical state. Three types of milieus may be applied during ammonothermal synthesis: ammonobasic, ammononeutral or ammonoacidic, evoked by the used starting materials and mineralizers, strongly influencing the obtained products. There is little known about the dissolution and materials transport processes or the deposition mechanisms during ammonothermal crystal growth. However, the initial results indicate the possible nature of different intermediate species present in the respective milieus. A Alkali or alkaline-earth metal, A(1) = alkali metal, A(2) = alkaline-earth metal B Further metal, might be main group metal, transition or rare-earth metal M Transition metal, excluding Sc, Y, La R Rare-earth metal, Sc, Y, La-Lu X Halide E Other main group element

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Section: Intermediate Species Controlling Solubility and Growth Ratesmentioning

confidence: 97%

Chemistry of Ammonothermal Synthesis

2014

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“…However, these methods employed polycrystalline GaN as seeds in order to grow the material. Other specific growth parameters related to this method are, high ammonia (NH 3 ) pressure in the system (between 150-500 MPa), temperature in the range of 500-600 °C and a long growth time that could take several hours [2][3][4][5][6][7][8] . Optimization of the system in order to improve the growth rate and purity are in progress [9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

et al. 2017

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Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH 4 OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH 4 OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH 4 OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.

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“…The experimental setup for the ammonothermal GaN growth has been described previously [7,8]. The present growth experiments were carried out in ammonobasic solutions in high-nickel-content super-alloy autoclaves for up to six weeks.…”

Section: Methodsmentioning

confidence: 99%

Structural and optical properties of GaN crystals grown by the ammonothermal technique

Wang

Weyburne

Sun-Paduano

et al. 2011

Phys. Status Solidi C

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High quality GaN crystals grown by the ammonothermal method are reported. The grown crystals possess excellent structural and optical properties. As confirmed by X‐ray diffractions, the crystals have very low overall Bragg peak broadening and particularly low twist variance. X‐ray rocking curves indicate the ammonothermal growth is replicating or improving from the seed crystal, with as low as 65 arc‐sec FWHM on (002) when using a 1×3 mm2 unslitted X‐ray spot size. Room temperature PL indicates the material has almost no yellow‐band emission although the yellow emission peak increased after annealing of the sample at 900 °C. The availability of yellow‐band free ammonothermal wafers offers a unique opportunity to study the origin of the yellow‐band emission in GaN (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Ammonothermal growth of GaN crystals in alkaline solutions

Cited by 91 publications

References 11 publications

Chemistry of Ammonothermal Synthesis

Chemistry of Ammonothermal Synthesis

Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Structural and optical properties of GaN crystals grown by the ammonothermal technique

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