Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 ± 0.5 o from the c-axis.TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

AlN epilayers were grown by metal organic chemical vapor deposition on sapphire substrates. X-ray diffraction measurements revealed that the threading dislocation (TD) density, in particular, the edge TD density, decreases considerably with increasing the epilayer thickness. Photoluminescence results showed that the intensity ratio of the band edge emission to the defect related emission increases linearly with increasing the epilayer thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep ultraviolet (DUV) photodetectors decreases drastically with the AlN epilayer thickness. The results suggested that one effective way for attaining DUV optoelectronic devices with improved performance is to increase the thickness of the AlN epilayer template, which results in the reduction of the TD density.

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We have generated an ultrabroad mid-infrared continuum by using single-pass optical parametric generation (OPG) in orientation-patterned GaAs (OP-GaAs). The spectrum spans more than an octave, from 4.5 to 10.7 microm, measured 20 dB down from the peak. The 17.5 mm long, 0.5 mm thick, all-epitaxially-grown OP-GaAs sample with a 166.6-microm quasi-phase-matching period was pumped with 3.1-3.3 microm wavelength, 1 ps pulses up to 2 microJ in energy. The OPG threshold was observed at 55 nJ pump energy with the pump polarized along the [111] crystal direction. The slope efficiency near threshold was 51%, and the external conversion efficiency was as high as 15%.