“…In our previous work [15], we have evidenced, from RBS-C analysis of the aluminium sublattice, the presence of two incident xenon ions effects in sapphire: a partial disorder creation that saturates at $40% followed by a highly disordered layer developing from the surface to the depth above a threshold fluence of $1.2 Â 10 13 ions/cm 2 . But, for the oxygen sublattice, we observed only one effect that is the partial disorder creation.…”