1998
DOI: 10.1007/978-1-4615-5631-2
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Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology

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Cited by 285 publications
(236 citation statements)
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“…2b) were taken from Schropp and Zeman [6], with the exceptions that all the a-Si:H layers have an assumed bandgap of 1.78 eV, electron affinity of 4 eV, a relative permittivity of 11.9, and the peak dangling bond concentration in the intrinsic region was set to 5 x 10 17 cm -3 . In addition, we added a distributed series resistance of 15 Ω cm 2 to reproduce the slope of the current-voltage curve near open circuit.…”
Section: Electrical Parametersmentioning
confidence: 99%
“…2b) were taken from Schropp and Zeman [6], with the exceptions that all the a-Si:H layers have an assumed bandgap of 1.78 eV, electron affinity of 4 eV, a relative permittivity of 11.9, and the peak dangling bond concentration in the intrinsic region was set to 5 x 10 17 cm -3 . In addition, we added a distributed series resistance of 15 Ω cm 2 to reproduce the slope of the current-voltage curve near open circuit.…”
Section: Electrical Parametersmentioning
confidence: 99%
“…These complex structures can reach higher conversion efficiencies than single cells due to a more efficient utilization of the solar spectrum and to the improved collection of photogenerated carriers. 1 In particular the concept of the micromorph tandem solar cell that combines amorphous hydrogenated silicon ͑a-Si: H͒ with microcrystalline silicon ͑ c-Si͒ has become a promising strategy due to its simplicity in the design and to its good performance. 2 The micromorph cell does not incorporate any silicon alloys in the absorber layers; it has the optimal bandgap combination for terrestrial applications, and it is quite stable to light induced degradation.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, we carried out the simulation study using the ASA program to confirm or reject the presence of inversion layer in the studied samples. For simulation we have chosen parameters of the amorphous silicon taken from the literature [5]. The simulated band diagram of the aSi:H(i)/c-Si(p) heterostructure is shown in Fig.…”
Section: Capacitance-voltage Measurementsmentioning
confidence: 99%