Amorphous Ga–Sn–O thin-film crosspoint-type spike-timing-dependent-plasticity device

Abstract

An amorphous Ga-Sn-O (α-GTO) thin-film crosspoint-type spike-timing-dependent-plasticity (STDP) device has been developed. The α-GTO thin-film consists of omnipresent elements, can be easily deposited, and is therefore inexpensive. The STDP is a promising learning rule for neuromorphic systems. In this study, first, an α-GTO thin-film crosspoint-type STDP device is fabricated. Next, simple spiking pulses are applied as pre-and post-synapse signals. Finally, a symmetric STDP characteristic is observed, which is due to whether the electric field becomes high during the pulse application. From the potential feasibilities, we would like you to investigate and apply it as a basic technology for AI electronics.

Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic

“…In comparison with the previous developments, the outstanding advantages of this study are: the device structure is extremely simple where the GTO layers are deposited using one series of sputtering; the constituent materials do not include rare and toxic metals; nevertheless an analog plasticity characteristic appears; and there is a future potential that three-dimensionally stacked structure can be realized by such AOS devices. Particularly, in comparison with our prior work [8][9][10][11][12][13][14], the novel performance achieved in this study is the analog plasticity characteristic, namely, the conductance is dependent on Vset, which is qualitatively different from our prior ones and remarkably suitable for neuromorphic systems.…”

“…On the other hand, we are investigating one of the AOS devices [6], Ga-Sn-O (GTO) devices, because they do not include rare and toxic metals such as In [7]. Moreover, we are developing GTO thin-film memristors and other metal-oxide semiconductor synapse elements [8][9][10][11][12][13][14]. Of course, other research institutes are also developing memristors of various materials as synapse elements [15][16][17][18][19][20][21][22][23].…”

Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems

“…technologies [13,14]. On the other hand, amorphous metal-oxide semiconductor (AOS) thin films are being investigated for diverse applications [15][16][17][18][19][20][21][22][23][24][25][26][27] and proposed also for neuromorphic systems [28][29][30][31][32][33][34][35][36][37][38], whose advantages are that they have analog characteristic [39] and can have three-dimensional structure [40].…”

IGZO synaptic thin-film transistors with embedded AlO x charge-trapping layers

“…9,[23][24][25][26][27] Important synaptic features such as spike-timing-dependent-plasticity, longterm-potentiation or long-term-depression were demonstrated from AOS-based devices, suggesting potential for large-scale integration. [28][29][30] Not limited to the transistor-type devices, vertical two-terminal devices with sandwiched AOS channel were also reported. [30][31][32][33] Despite the excellent performance of AOSs, the simplification and upscaling of their fabrication process, as well as achieving reproducible synaptic behaviors, remain important milestones to be achieved to expand the technology beyond the laboratory scale.…”

“…[28][29][30] Not limited to the transistor-type devices, vertical two-terminal devices with sandwiched AOS channel were also reported. [30][31][32][33] Despite the excellent performance of AOSs, the simplification and upscaling of their fabrication process, as well as achieving reproducible synaptic behaviors, remain important milestones to be achieved to expand the technology beyond the laboratory scale.…”