Amorphous Indium Titanium Zinc Oxide Thin Film Transistor and Impact of Gate Dielectrics on Its Photo-Electrical Properties

Hsu, Min‐Huei; Chang, Shoou Jinn; Wu, Wei; Li, Jyun Yi

doi:10.1149/2.0071807jss

Cited by 6 publications

(3 citation statements)

References 30 publications

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“…From the absorption spectra, it is clear that the thin films have a critical absorption edge around 300 nm. The optical bandgap can be determined by applying the Tauc model (the plots between (αhν) 2 versus hν) [9,[29][30][31] for the films and are illustrated in the inset. The analysis indicates that the optical gap value increases with deposition temperature with values of 2.02, 2.09, 2.21, and 2.35 eV for room temperature, 200, 250, and 300 °C deposition respectively.…”

Section: Optical Analysismentioning

confidence: 99%

Effect of substrate temperature on the optoelectronic properties of DC magnetron sputtered copper oxide films

Koshy¹,

Sudha²,

Yadav³

et al. 2022

Preprint

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Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 °C. XRD analysis indicates that the oxide formed is primarily Cu 2 O and the absorption spectra show the films have a critical absorption edge at around 300 nm. The sheet resistance gradually decreases with increase in deposition temperature thereby increasing the conductivity of these thin films. Also observed is the increase in band gap from 2.20 eV for room temperature deposition to 2.35 eV at 300 °C. The optical band gap and the variation of sheet resistance with temperature shows that the microstructure plays a vital role in their behavior. These transformation characteristics are of huge technological importance having variety of applications including transparent solar cell fabrication.

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Section: Optical Analysismentioning

confidence: 99%

Effect of substrate temperature on the optoelectronic properties of DC magnetron sputtered copper oxide films

Koshy¹,

Sudha²,

Yadav³

et al. 2022

Preprint

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“…In this work, we fabricated IGO thin film by RF sputter, which is capable under room temperature. In addition, according to the previous reports, [20][21][22][23] reduction of trap density and enhancement of TFT performance could be attained by applying high-k material as gate insulator, such as Al 2 O 3 (k∼9), Y 2 O 3 (k∼14), HfO 2 (k∼16), ZrO 2 (k∼16), and Ta 2 O 5 (k∼20). By doing so, several benefits including low gate leakage current, low operation voltage, and small equivalent oxide thickness (EOT) are also achieved.…”

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confidence: 90%

Indium Gallium Oxide Thin Film Transistor for Two-Stage UV Sensor Application

Huang

Hsu

Chang

et al. 2019

ECS J. Solid State Sci. Technol.

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In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21 × 106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65 × 105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.

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“…9 The extraction of carrier mobility using the Shichman-Hodges intensive model in the linear region has been a widely used and straightforward method in silicon-based MOS-FETs. 10,11 Although this model does not account for the effect of non-gate region resistance, it can still be applied to the sourcedrain parasitic resistance of very small silicon-based MOS-FETs. 12,13 However, Gallium nitride high electron mobility transistor (GaN HEMT) has a large non-gate region, making it impossible to ignore the effect of non-gate-down resistance.…”

Section: Introductionmentioning

confidence: 99%