Amorphous InGaZnO4 films: Gas sensor response and stability

Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation

“…[4] Compared to traditional amorphous/poly Si thin film transistors, amorphous oxide semiconductors (AOSs) that are based on TFTs have great advantages of low temperature and a low cost process as well as superior electron mobility and transparency. [5] For mass production to be practical, higher device performance and better device instability still remain as some of the most critical issues.…”

Thickness and annealing effects on thermally evaporated InZnO thin films for gas sensors and blue, green and yellow emissive optical devices

“…Also, annealing often smoothens the surface of a film and makes its thickness more uniform [14,15]. In addition to that, to enhance the sensitivity of sensors, the sensors have typically been heated to elevated temperatures (200e500 C) [16].…”

Highly sensitive amorphous In–Ga–Zn–O films for ppb-level ozone sensing: Effects of deposition temperature

“…[5,6]. To increase sensitivity, semiconductor gas sensors are usually operated at high temperatures (in the range 200-500 • C) by exciting electrons from the valence band to the conduction band [3,5,[7][8][9][10]. Although this approach leads to much higher sensitivity, it is inadequate for prolonged environmental detection.…”

“…In this study, a semiconductor material, amorphous indium gallium zinc oxide (a-IGZO) [10,[14][15][16][17], is used for gas detection. IGZO-an n-type transparent semiconductor-plays an important role in LCD displays.…”