Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation

Cho, S. H.; Choi, Minjun; Chung, Kwun Bum; Park, J. S.

doi:10.1007/s13391-015-4442-1

Cited by 13 publications

(9 citation statements)

References 26 publications

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“…But after varying the irradiation time, the density does not significantly change, since we used low-temperature heating (115 • C). This also confirms the previous report which used a combination treatment of UV and annealing at 150 • C and showed minimal differences in both the physical structure and surface morphology, which implies that these were not the main cause for the improved electrical device performance [35]. Supported by the thermogravimetry differential thermal analysis (TG-DTA) result, a higher temperature is needed (>178 • C) to have sufficient energy for the decomposition of precursor-related compounds and formation of metal oxides which cause a significant change in density.…”

Section: Film Characteristicssupporting

confidence: 91%

Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Hanifah

Bermundo

Uenuma

et al. 2023

J. Phys. D: Appl. Phys.

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Developing a low-temperature fabrication strategy for amorphous oxide semiconductors, such as amorphous Indium Zinc Oxide (IZO) channel layers, for use in flexible oxide-based thin film transistors (TFTs) is essential. In this work, high-performance and highly stable all-solution processed a-IZO TFTs were achieved by varying the duration of photo-assisted treatment (ultraviolet (UV) combination treatment), which combines UV irradiation with low heating temperature (115oC) by all-solution processed approach. From the experimental results, UV-irradiation can activate the IZO source, drain, and gate electrodes which induces TFT switching. X-ray Photoelectron Spectroscopy analysis revealed oxygen vacancy (Vo) generation after the UV combination treatment which increased the carrier concentration and improved the conductivity of IZO. All-solution processed a-IZO TFTs with high performance and stability was achieved at a low temperature of 115oC for 90 min treatment time, including high mobility (µ) up to 17.45 cm2/Vs, threshold voltage (Vth) = -1.2 V, and subthreshold swing (SS) = 0.64 V/dec. The stability behaviour of self-aligned top gate top contact a-IZO TFT fabricated by UV combination treatment was investigated under positive bias stress (PBS) and negative bias stress (NBS) with the smallest ∆V th of 2.4 V and 0.5 V for PBS and NBS, respectively. Our work shows that ∆Vth is improved due to reduction of interface trap density and moisture-related impurities especially on the activated electrode area. . As a result, it can be inferred that UV combination treatment is a simple and promising method to enhance the electrical and stability performance of a-IZO TFTs even at the low-temperature process, which is useful for flexible devices.

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Section: Film Characteristicssupporting

confidence: 91%

Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Hanifah

Bermundo

Uenuma

et al. 2023

J. Phys. D: Appl. Phys.

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“…However, insufficient activation energy during the annealing process results in poor-quality IGZO films with a high density of defects in the M-O-M network, as well as impurities 43 . As an innovative annealing technology to reduce the process temperature without degrading the quality of the film, DUV photo and microwave annealing processes were performed at low temperature 44 . The maximum process temperatures of the microwave and DUV photo annealing were found to be around 140 °C and 200 °C, respectively, indicating that the temperatures as measured on the surfaces of the films were increased during the annealing process due to the energy absorption.…”

Section: Resultsmentioning

confidence: 99%

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

Jeon

Kang

et al. 2019

Sci Rep

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Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al 2 O 3 ) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al 2 O 3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 10 4 and field effect mobility up to 1.5 cm 2 /V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

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“…Post process can be performed on gate insulator, semiconductor channel layer or passivation 3 6 11 15 39 40 41 . Examples of the post process include low temperature thermal annealing 3 6 11 15 39 , high pressure annealing, 40 ultra−violet light exposure and plasma process 41 42 Among these processes, low temperature annealing process has been widely used for display devices due to low temperature thermal budget however it is insufficient to perfectly cure the defects located in the interface as well as the bulk material. Recently, in order to improve annealing effect, high pressure annealing process treated on TFT was reported by several groups and the result showed the enhancement of device performance 40 .…”

mentioning

confidence: 99%

“…Thus it requires long ramp-up and ramp-down time up to a few hours. On the other hand, ultra-violet assisted photon exposure doesn’t necessarily require additional heating process and thus it is suitable for display device formed on glass substrate however it takes a relatively long process time 41 42 . Plasma process includes the combined effect of energetic charge particles impingement and vacuum-ultraviolet photon exposure on the film during plasma processing.…”

mentioning

confidence: 99%

High mobility and high stability glassy metal-oxynitride materials and devices

Lee

Kim

Benayad

et al. 2016

Sci Rep

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In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

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Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation

Cited by 13 publications

References 26 publications

Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

High mobility and high stability glassy metal-oxynitride materials and devices

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