Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells

doi:10.1007/978-3-642-37039-7

Cited by 8 publications

References 109 publications

(151 reference statements)

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Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface

Kleider

Alvarez

Brüggemann

et al. 2019

Physica Status Solidi (a)

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The authors review experimental and modeling approaches developed at GeePs to have a better knowledge and understanding of the interface between hydrogenated amorphous silicon (a‐Si:H) and crystalline silicon (c‐Si) in heterojunction solar cells. The authors emphasize the existence of a strong inversion layer at the c‐Si surface for both (n) a‐Si:H/(p) c‐Si and (p) a‐Si:H/(n) c‐Si heterojunctions. Conductive probe atomic force microscopy reveals the existence of a conductive channel at the c‐Si surface. The analysis of complementary lateral planar conductance and capacitance measurements allows for a better description of the band diagram in both types of heterojunctions especially through the determination of band offset values. Furthermore, the passivation properties of the (i) a‐Si:H buffer layer are studied by modeling the volume defects in a‐Si:H with the defect‐pool model. In particular, the DOS in the very thin (i) a‐Si:H layers is much larger than in bulk (i) a‐Si:H because the Fermi level position favors defect creation. Surface defects in c‐Si at the a‐Si:H/c‐Si interface are then quantified and the general trends of effective lifetime measurements with the (i) a‐Si:H layer thickness can be explained, notably the increase of the effective lifetime in c‐Si with increasing the (i) a‐Si:H buffer thickness.

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Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface

Kleider

Alvarez

Brüggemann

et al. 2019

Physica Status Solidi (a)

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Sonochemical Modification of SiGe Layers for Photovoltaic Applications

Nadtochiy

Korotchenkov

Schlosser

2019

Physica Status Solidi (a)

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To improve the photovoltaic response of SiGe and amorphous silicon (a-Si)/SiGe surfaces, a sonochemical treatment in chloroform (CHCl 3 ) is used. The use of the sonochemical reaction slows down the observed surface photovoltage (SPV) decay and enhances its magnitude in SiGe and a-Si/SiGe thin layers grown on Si. The average surface-integrated photovoltage and decay time can increase up to 50%. This effect is not observed in distilled water, indicative of the fact that CH-containing radicals can lead to the observed improvements. It is suggested that the effect can be explained as follows: CHCl 3 is decomposed and produces hydrocarbon chains, which are then decomposed further away into hydrogen and carbon. The reactive Si dangling bonds revealed on the surface of SiGe alloys are saturated by the hydrocarbon species to passivate the surface. It is, therefore, advantageous to use sonochemical surface modification of silicon-germanium-based photovoltaic materials in chloroform solutions.

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