2006
DOI: 10.1016/j.jnoncrysol.2005.10.056
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Amorphous Silicon Nitride: a suitable alloy for optical multilayered structures

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Cited by 30 publications
(19 citation statements)
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“…Dielectrics with suitable optical parameters are already known. The refractive index of Si 3 N 4 can be adjusted by the relative amounts of silane and ammonia during deposition [70-71]. The fabrication IDPC structures have also been reported using other methods such as layer-by-layer assembly and spin-coating methods [72-73].…”
Section: Discussionmentioning
confidence: 99%
“…Dielectrics with suitable optical parameters are already known. The refractive index of Si 3 N 4 can be adjusted by the relative amounts of silane and ammonia during deposition [70-71]. The fabrication IDPC structures have also been reported using other methods such as layer-by-layer assembly and spin-coating methods [72-73].…”
Section: Discussionmentioning
confidence: 99%
“…1 the MC is almost transparent in the range investigated for SH measurements, while strong absorption losses occur for wavelength corresponding to the measured TH. In particular, ellipsometric and interferometric analysis [12] evidence that the absorption coefficient of the high refractive index layers is of the order of 10 5 cm À1 in the investigated TH range. It is therefore reasonable to infer that the effective enhancement factor for the third-order nonlinear process would be significantly larger than the observed one once the optical losses are ruled out.…”
Section: Discussionmentioning
confidence: 89%
“…36 and the frequency dependent dielectric data of the silicon nitride (ε 2 ) are estimated by the means of standard optical measurements. 37 The dielectric constant of the alternating SiO 2 layers are taken to be ε 3 = 2.19. TMM simulations for TE excitation result in the reflection spectra shown in Fig.…”
Section: Experimental Verification and Versatilitymentioning
confidence: 99%