1993
DOI: 10.1016/0920-5632(93)90036-6
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Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

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Cited by 11 publications
(5 citation statements)
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“…Holl et al [11] measured that 52,000 optical photons were emitted per 1-MeV absorbed and Jing et al [12,13] reported that 64,000 optical photons were emitted per 1-MeV absorbed. Hence, we assumed that 58 optical photons were emitted per keV absorbed (a mean value between the two reported values).…”
Section: Methodsmentioning
confidence: 98%
“…Holl et al [11] measured that 52,000 optical photons were emitted per 1-MeV absorbed and Jing et al [12,13] reported that 64,000 optical photons were emitted per 1-MeV absorbed. Hence, we assumed that 58 optical photons were emitted per keV absorbed (a mean value between the two reported values).…”
Section: Methodsmentioning
confidence: 98%
“…Backward diffusion can therefore occm over a distance, XD, of approximately 23 (2.16) where E is the electric field. The estimated value of xD is in the range of 35nm -90 nm [8,9].…”
Section: Back Diffusion Effectmentioning
confidence: 99%
“…These intrinsic defects produce defect states between the valence type and conducted type states ( Fig.l.2b). The most prominent intrinsic defect is the unsaturated bond, called the dangling bond, which is a paramagnetic center contributing an uncompensated spin to the electron spin resonance (ESR) signal [8,9]. Depending on the particular amorphous material considered, the defects may have different contributions to the electronic energy structure such as dangling bonds and voids which act as trapping and recombination centers for electrons and holes.…”
Section: The Disordered Structurementioning
confidence: 99%
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“…These properties, which are essential for good image quality, arise from the columnar structure of CsI:Tl layers, when grown by evaporated deposition at high temperature. Jing et al [45] and Perez-Mendez et al [46] have shown that a 75-mm-thick CsI:Tl layer provides a spatial resolution of 12 c mm -1 . The X-ray quantum detection efficiency of the screen can be adjusted by varying the phosphor thickness without exacerbating unsharpness.…”
Section: Amorphous Silicon Tft Flat-panel Image Readoutmentioning
confidence: 99%