Amorphous-Silicon Thin-Film Transistors Fabricated at 300 $^{\circ}\hbox{C}$ on a Free-Standing Foil Substrate of Clear Plastic

Abstract

We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 • C on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over the entire active surface. Back-channel-passivated TFTs made at 300 • C on glass substrates and plastic substrates have identical electrical characteristics and gate-bias-stress stability. These results suggest that free-standing clear-plastic foil can replace display glass as a substrate from the points of process temperature, substrate and device integrity, and TFT performance and stability.Index Terms-Amorphous silicon (a-Si), gate-bias stress, mechanical stress, plastic substrate, stability, thin-film transistor (TFT).

Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study

“…Oxide semiconductors, and in particular amorphous a-IGZO, provide electron mobility µ ef f > 10 cm 2 /Vs [7], well above the standard values obtained for organic materials and amorphous-Si [8], [9]. After modeling all the transistor parameters for DC and AC characteristics [10], we studied the implementation of the two circuits using two metals layers (1 st metal: gate layer, 2 nd metal: source, drain and interconnections) and three metals (1 st metal: gate layer, 2 nd metal: source and drain, 3 rd metal: interconnections) for the first time (see Fig.…”

Thin film membrane based on a-SiGe: B and MEMS technology for application in cochlear implants

“…The first layer is formed by a 150 nm thick SiN obtained by (LPCVD). The deposition parameters of SiN films, were as follows: deposition temperature 700°C, 547 mTorr using SiH 4 and NH 3 .…”

“…The use of thin films obtained at low temperature of deposition (T b 300 C) open the possibility to use different type of substrates such as glass, metal, plastic and biocompatible materials. In addition, the use of low temperature allows the integration of MEMS with electronic circuits, either CMOS (Complementary MOS-FET) or TFT (Thin Film Transistors) for flexible electronics [2,3]. Also, different works using thin film in MEMS have been reported, for example: IR bolometers sensors have been developed through surface micromachining, using a-SiGe:H as a sensing layer in a bridge configuration supported by a SiNx thin film, all the materials were deposited by PECVD at low temperature of deposition [4].…”

Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique

“…Recent advances in flexible electronics have been evolving on the basis of amorphous silicon (Si), organic, and oxide semiconductor materials and low-temperature fabrication technologies such as solution-based process and printing technique [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. However, these devices have serious problems originated from their low electrical performance, high operating voltage, and poor reliability under operation.…”