2016
DOI: 10.1002/pssb.201552551
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Amorphous thin films in the gallium–chalcogen system

Abstract: Thin amorphous films based on gallium–chalcogen (Ga–Ch), namely Ga2S3, Ga2Se3, Ga2Te3, and GaTe have been prepared by pulsed laser deposition (PLD). The films were characterized by X‐ray diffraction, extended X‐ray absorption fine structure (EXAFS), energy‐dispersive X‐ray spectroscopy (EDX), optical transmission spectroscopy, ellipsometry, and electrical measurements. Structural measurements showed that Ga is threefold coordinated, except the Te‐based alloys were, it seems, only twofold coordinated, while the… Show more

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Cited by 8 publications
(12 citation statements)
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“…[14] GaSe thin films were deposited at room temperature onto glass substrate and carbons tub by thermale vaporationt echniques, [14b] whereas GaSe nanosheets were deposited by PVD, [14c] and similarly, amorphous Ga 2 Se 3 films were deposited ontog lass substrate by PVD. [15] Those are the reasons fort he single-source precursors' application to develop good quality amorphous GaSe thin films presented in this work. Moreover,w eh ave showed the possible preparation of amorphous GaS materialb yaspincoating methodu sing organometallicN !Ga-coordinated organogallium sulfides as suitable SSPs recently.…”
Section: Introductionmentioning
confidence: 95%
See 1 more Smart Citation
“…[14] GaSe thin films were deposited at room temperature onto glass substrate and carbons tub by thermale vaporationt echniques, [14b] whereas GaSe nanosheets were deposited by PVD, [14c] and similarly, amorphous Ga 2 Se 3 films were deposited ontog lass substrate by PVD. [15] Those are the reasons fort he single-source precursors' application to develop good quality amorphous GaSe thin films presented in this work. Moreover,w eh ave showed the possible preparation of amorphous GaS materialb yaspincoating methodu sing organometallicN !Ga-coordinated organogallium sulfides as suitable SSPs recently.…”
Section: Introductionmentioning
confidence: 95%
“…In contrast, the deposition of amorphous GaSe layers was reported infrequently . GaSe thin films were deposited at room temperature onto glass substrate and carbon stub by thermal evaporation techniques, whereas GaSe nanosheets were deposited by PVD, and similarly, amorphous Ga 2 Se 3 films were deposited onto glass substrate by PVD . Those are the reasons for the single‐source precursors’ application to develop good quality amorphous GaSe thin films presented in this work.…”
Section: Introductionmentioning
confidence: 98%
“…Due to high refractive index, the chalcogenide films constitute high‐contrast 2D arrays [ 46–49 ] or waveguides [ 50 ] confining the electromagnetic field in a suitable mode that can improve the plasmonic sensor's sensibility. [ 51–54 ] The photo‐induced phenomena in chalcogenide materials may lead to high‐value changes in optical reflection when the films are placed in resonance structures.…”
Section: Present Chalcogenide Research Centers and Their Main Topicsmentioning
confidence: 99%
“…In addition to their own specific research, their contribution is often part of the results obtained in cooperation with other groups from other institutes. [ 21,25,28,46,49 ]…”
Section: Present Chalcogenide Research Centers and Their Main Topicsmentioning
confidence: 99%
“…The semiconductor film must have a higher refractive index than other materials that make up the SPR structure, constituting a plasmonic waveguide. Amorphous chalcogenide films [ 15,16 ] are characterized by a high refractive index of 2.5 for As 2 S 3 and 2.8 for As 2 Se 3 , which leads to greater field confining.…”
Section: Introductionmentioning
confidence: 99%