Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

“…On the other hand, a series of n-type amorphous oxide semiconductors have been found to date, such as a-In 2 O 3 , [13] a-AgSbO 3 , [14] a-2CdO´GeO 2 , [15] a-CdO´PbO x , [16] a-InGaO 3 (ZnO) m (m £ 4), [17] and a-ZnO´SnO 2 . [18] These semiconductors are characterized by their unique electron transport properties, i.e., the absence of the Hall voltage sign double anomaly, which is commonly observed for existing amorphous semiconductors, [19] and large mobilities (e.g., Hall electron mobility >10 cm 2 V ±1 s ±1 ) comparable to those of the corresponding crystalline materials.…”

“…Amorphous InGaZn-O 4 is known to be an n-type semiconductor and was fabricated by radiofrequency (RF) sputtering at room temperature. [17] It exhibited a conductivity of 1.4 10 ±1 S cm ±1 at room temperature. Carrier density is estimated to be 4.2 10 16 cm ±3 using the mobility value of 21 cm 2 V ±1 s ±1 we reported earlier.…”

Reactive Solid-Phase Epitaxy: A Powerful Method for Epitaxial Film Growth of Complex Layered Oxides

“…23 Step 3: The resultant bilayer film was fully covered by placing a YSZ plate 10 mmj10 mmj0.5 mm t on the film surface to suppress vaporization of ZnO and In 2 O 3 during the annealing in step 4.…”

Optical and electrical properties of co-sputtered amorphous transparent conducting zinc indium tin oxide thin films

“…Demands for transparent and conducting materials are rapidly 21 growing in technical applications such as transparent electrode amorphous TCOs such as indium oxide [7,8], indium gallium zinc 34 oxide [9], cadmium germinate [10,11], zinc tin oxide and zinc 35 indium oxide and its use in electronic circuits have been reported 36 [12][13][14][15][16]. These materials exhibit excellent optical transmission, 37 high electrical conductivity and high chemical stability [17][18][19][20].…”