Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

Libsch, F.; Roy, Abhinaba; White, M.H.

doi:10.1016/0169-4332(87)90089-4

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…Literature on the chemical nature of traps in SiN [23]- [25] attempts to relate distinct trap species for positive and negative traps. In contrast, an amphoteric trap model attributes the same species serving to trap both electron and holes [26]. Therefore, clarity in the relation of SiN composition to electron/hole trap properties to CTF performance is essential for the realization of CTF technology.…”

Section: Introductionmentioning

confidence: 99%

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

Sandhya

Oak

Chattar

et al. 2009

IEEE Trans. Electron Devices

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Abstract-Despite significant advances in structure and material optimization, poor erase (E) speeds and high retention charge loss remain the challenging issues for charge trap Flash (CTF) memories. In this paper, the dependence of SANOS memory performance and reliability on the composition of silicon nitride (SiN) layer is extensively studied. The effect of varying the Si:N ratio on program (P)/E and retention characteristics is investigated. SiN composition is shown to significantly alter the electron and hole trap properties. Varying the SiN composition from N-rich (N + ) to Si-rich (Si + ) lowers electron trap depth but increases hole trap depth, causing lower P state saturation but significant overerase, resulting in an enhanced memory window. During retention, P state charge loss depends on thermal emission followed by the tunneling out of electrons mostly through tunnel dielectric, which becomes worse for Si + SiN. Erase state charge loss mainly depends on hole redistribution under the influence of internal electric fields, which improves with Si + SiN. This paper identifies several important performances versus reliability tradeoffs to be considered during the optimization of SiN layer composition. It also explores the option for CTF optimization through the engineering of SiN stoichiometry for multilevel cell NAND Flash applications.Index Terms-Charge trap Flash (CTF), program/erase (P/E) window, retention, SANOS, silicon nitride (SiN), SONOS.

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Section: Introductionmentioning

confidence: 99%

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

Sandhya

Oak

Chattar

et al. 2009

IEEE Trans. Electron Devices

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Charge trapping characteristics of multilayer dielectrics in metal-insulator semiconductor structures

Baunach

Spitzer

1988

Journal of Applied Physics

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Articles you may be interested inElectronic structure, charge and orbital order and metal-insulator transition in nickelates AIP Conf. Proc. 1512, 82 (2013); 10.1063/1.4790921Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures Determination of trapped charge distributions in the dielectric of a metaloxidesemiconductor structure An analysis of the charge trapping properties of multilayer dielectrics is important for an understanding of the physics of stacked dielectric films. Quantities of interest are the amount and the centroid ohhe trapped charge. In this work a new experimental setup is presented that allows the determination of these quantities. In addition, the method itself allows one to check its inherent premises. Its application to oxide/nitride/oxide triple layers reveals that the trapped charge centroid is positioned in the middle ohhe nitride layer with charge densities up to some 1013 e cm -2 in saturation. The relevance of charge trapping for defect-related breakdown events is pointed out. 4567 J.

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Charge transport-accumulation in multilayer structures with Si3N4 and thick(5.5 nm) SiO2

Novikov

2015

Journal of Applied Physics

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Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si 3 N 4 is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10 À14 cm 2 . With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO 2 /Si 3 N 4 interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001)). V C 2015 AIP Publishing LLC.

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Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

Cited by 5 publications

References 14 publications

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

Charge trapping characteristics of multilayer dielectrics in metal-insulator semiconductor structures

Charge transport-accumulation in multilayer structures with Si3N4 and thick(5.5 nm) SiO2

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