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Articles you may be interested inElectronic structure, charge and orbital order and metal-insulator transition in nickelates AIP Conf. Proc. 1512, 82 (2013); 10.1063/1.4790921Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures Determination of trapped charge distributions in the dielectric of a metaloxidesemiconductor structure An analysis of the charge trapping properties of multilayer dielectrics is important for an understanding of the physics of stacked dielectric films. Quantities of interest are the amount and the centroid ohhe trapped charge. In this work a new experimental setup is presented that allows the determination of these quantities. In addition, the method itself allows one to check its inherent premises. Its application to oxide/nitride/oxide triple layers reveals that the trapped charge centroid is positioned in the middle ohhe nitride layer with charge densities up to some 1013 e cm -2 in saturation. The relevance of charge trapping for defect-related breakdown events is pointed out. 4567 J.

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