An 8$\,\times\,$8 InP Monolithic Tunable Optical Router (MOTOR) Packet Forwarding Chip

Nicholes, Steven C.; Masanovic, M.L.; Jevremovic, Biljana; Lively, Erica; Coldren, L.A.; Blumenthal, D.J.

doi:10.1109/jlt.2009.2030145

Cited by 114 publications

(48 citation statements)

References 24 publications

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“…4 One recent demonstration is an 838 InP monolithic tunable optical router packet forwarding chip, which successfully integrated about 200 functional elements in a chip with a size of 4.25314.5 mm. 2 Infinera plans to deploy a 400-Gb s 21 PIC transmitter with more than 300 optical functions in live networks. 5 On the other hand, silicon-based PICs [6][7][8][9][10][11][12][13][14][15][16] have also become very popular, because of their compatibility with mature CMOS (complementary metal-oxide-semiconductor) technologies with excellent processing control, low cost and high volume processing.…”

Section: Introductionmentioning

confidence: 99%

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

2012

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Section: Introductionmentioning

confidence: 99%

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

2012

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“…2,3 The process steps associated with the QWI are generally simple in comparison with the asymmetric twin-waveguide (ATG) 4 approach to PICs, where delicate taper designs are required to transfer light in the vertical plane or with the epitaxial regrowth approach where regrowth 5 with Al containing materials is difficult. Among the various intermixing methods, the top surface being encapsulated with a dielectric film prior to thermal annealing [6][7][8][9][10][11][12] is advantageous since it does not require sacrificial layers or external atoms and thus potential additional damage to the quantum well (QW) structure can be minimized.…”

Section: Sin X -Induced Intermixing In Alingaas/inp Quantum Well Thromentioning

confidence: 99%

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

Lee

Thomas

Gocalinska

et al. 2012

Journal of Applied Physics

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We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN x dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift. V C 2012 American Institute of Physics.

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“…The study of SOA-based AOWC using discrete components has matured for systems operating at 10-40 Gb/s [4] and several demonstrations at higher bit rates operation (up to 320 Gb/s [5][6][7]) have taken place. Schemes for integrated wavelength converters have begun to attract increasing interest as they benefit from the small footprint photonic integrated circuits (PICs) offer as well as the eliminated component-tocomponent coupling losses [8,9].…”

Section: Introductionmentioning

confidence: 99%

40 Gb/s all-optical unicast and multicast wavelength converter array on an InP monolithically integrated chip fabricated by MPW technology

et al. 2017

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policy If you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract: We present an InP monolithically integrated all-optical wavelength converter array chip and experimentally validate its performance for unicast (single output wavelength) and multicast (multiple output wavelengths) wavelength conversion. The monolithically integrated chip includes four semiconductor optical amplifiers with an arrayed-waveguide grating and two delayed interferometers. The chip is fabricated on a multi-project wafer (MPW) platform, which allows multiple designers to share space on the same wafer exploiting a generic integration platform. We demonstrate error-free non-return-to-zero (NRZ) unicast wavelength conversions using 2 31-1 pseudorandom bit sequence data at 10 Gb/s, 20 Gb/s and 40 Gb/s with a 25-nm conversion range. Power penalties as low as 2.3 dB and 2.7 dB for NRZ and return-to-zero (RZ) unicast wavelength conversion at 40 Gb/s are obtained, respectively. Additionally, power penalties of 2.5 dB for NRZ and 3.2 dB for RZ signals at 40 Gb/s 1 × 2 multicast wavelength conversions are also achieved. conversion by semiconductor optical amplifiers," J. Lightwave Technol. 14(6), 942-954 (1996

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An 8$\,\times\,$8 InP Monolithic Tunable Optical Router (MOTOR) Packet Forwarding Chip

Cited by 114 publications

References 24 publications

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

40 Gb/s all-optical unicast and multicast wavelength converter array on an InP monolithically integrated chip fabricated by MPW technology

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