An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

Sano, Kimikazu; Murata, Koichi; Otsuji, T.; Akeyoshi, T.; Sano, Eiichi

doi:10.1109/4.902769

Cited by 41 publications

(11 citation statements)

References 19 publications

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“…By converting the input HEMT into a photodiode capable of ultrahigh-speed operation, the authors of Ref. 23 reported obtaining DEMUX operation at ultrahigh speeds of 80 Gbit/s. Also, the group in Germany has suggested that an RTD be attached to the source of the HEMT at the input to the MOBILE [24].…”

Section: Other Applications Of Mobilementioning

confidence: 98%

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A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

Maezawa

2006

Electron. Comm. Jpn. Pt. II

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SUMMARYNegative-resistance elements are important components in sustained oscillator circuits, and form the fundamental basis for various other nonlinear circuits. One of the most promising candidates among these elements for future high-frequency applications is the resonant tunneling diode, due to its high-speed characteristics. In this article we will discuss applications of negative resistance with an emphasis on these resonant tunneling diodes. First we will discuss millimeter and submillimeter waves, where the most fundamental and promising applications are. The first circuits we will investigate are oscillators; we then propose to use these circuits as a starting point for constructing generators of chaotic signals. We then discuss series-and parallel-connected negative-resistance elements, which leads us to the concept of monostable-bistable logic elements (MOBILE). We will describe and explain the origin of various distinctive features of the functioning of these elements and explore one of their most promising applications, that is, as AD converters.

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Section: Other Applications Of Mobilementioning

confidence: 98%

“…One of these is a MOBILE-based optoelectronic decision circuit [23]. By converting the input HEMT into a photodiode capable of ultrahigh-speed operation, the authors of Ref.…”

Section: Other Applications Of Mobilementioning

confidence: 99%

A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

Maezawa

2006

Electron. Comm. Jpn. Pt. II

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“…The proposed RTD-based multiplexing IC was fabricated by an RTD/HBT MMIC technology [9]. The emitter areas of upper and lower RTDs are designed to be 2 × 4.5 µm 2 and 2 × 2.5 µm 2 , respectively, for the proper operation of CML-type MOBILE [8], [13]. The emitter area of the HBT, which is used to modulate the current, is 1.5 × 4 µm 2 .…”

Section: Device and Circuit Performancesmentioning

confidence: 99%

A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Choi

Jeong

Lee

et al. 2009

IEEE Trans. Nanotechnology

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A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/ heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be onefourth of the current state-of-the-art conventional transistor-based multiplexing IC.Index Terms-Monostable-bistable logic element, multiplexing, quantum effect, resonant tunneling diode.

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“…The negative differential resistance (NDR) devices and circuits have been widely studied in many applications including the logic circuit [1][2][3], memory circuit [4][5][6][7], oscillator [8], analog-to-digital converter [9], frequency divider [10,11], flip-flop circuit [12,13], delta sigma modulator [14], and cellular neural network [15]. Especially the multiple-peak NDR circuit is a suitable element to apply to the multiple-valued memory (MVM).…”

Section: Introductionmentioning

confidence: 99%

Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

Gan

Tsai

Liang

2008

Analog Integr Circ Sig Process

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A novel multiple-selected and multiple-valued memory (MSMVM) design using the negative differential resistance (NDR) circuits is demonstrated. The NDR circuits are made of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). During suitably designing the parameters and connecting three MOS-HBT-NDR circuits, we can obtain the three-peak current-voltage (I-V) curves with different peak currents in the combined I-V characteristics. For the traditional resonant-tunneling-diode (RTD) memory circuit, one can only obtain four-valued memory states using a constant current source to bias the three-peak NDR circuit. However in this paper, we utilize two switch-controlled current sources to bias the threepeak NDR circuit at different current levels. By controlling the switches on and off alternatively, we can obtain the four-valued, three-valued, two-valued, and one-valued memory levels under the four different conditions. Our design is based on the standard 0.35 lm SiGe BiCMOS process.

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An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

Cited by 41 publications

References 19 publications

A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

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