2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers 2008
DOI: 10.1109/isscc.2008.4523145
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An 820μW 9b 40MS/s Noise-Tolerant Dynamic-SAR ADC in 90nm Digital CMOS

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Cited by 133 publications
(74 citation statements)
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“…4-21. It is seen that the SAR logic forms the dominant source of power consumption which agrees well with that of SAR ADCs with similar specification reported in [68], [9], [89], [90]. Post-layout simulation of the ADC including device noise was performed for the typical and worst PVT corners with near-Nyquist differential inputs and a sampling rate of 50 MS/s.…”
Section: Simulation Resultssupporting
confidence: 77%
“…4-21. It is seen that the SAR logic forms the dominant source of power consumption which agrees well with that of SAR ADCs with similar specification reported in [68], [9], [89], [90]. Post-layout simulation of the ADC including device noise was performed for the typical and worst PVT corners with near-Nyquist differential inputs and a sampling rate of 50 MS/s.…”
Section: Simulation Resultssupporting
confidence: 77%
“…One example is the noise-tolerant SAR ADC shown in Fig. 4 [15]. This design uses two offsetcalibrated fully dynamic comparators in parallel: one of these is designed for low power and consequently has fairly high noise (HN), whereas the other is optimized for low noise (LN) at a power penalty.…”
Section: Calibration Of Comparator Thresholdsmentioning
confidence: 99%
“…This design uses two offsetcalibrated fully dynamic comparators in parallel: one of these is designed for low power and consequently has fairly high noise (HN), whereas the other is optimized for low noise (LN) at a power penalty. In [15] the HN comparator is activated for the first eight SAR cycles, after which the LN comparator resolves two final cycles. By giving the final cycles 1b redundancy with respect to the first eight, the ADC can tolerate a fairly large r.m.s.…”
Section: Calibration Of Comparator Thresholdsmentioning
confidence: 99%
“…Since the RF front-end is usually the most power-hungry block in a node, its efficient implementation determines the choice of the technology in which the entire node is realized. In practice, this means the use of deep submicron CMOS processes, as these result in RF front-ends with the least amount of area and the greatest power efficiency [6][7][8], while also being favorable for the implementation of ADCs and digital circuitry [9][10][11]. As a result, for full integration, the CCIA must then be realized in the same technology.…”
Section: Introductionmentioning
confidence: 99%