An above IC MEMS RF switch

Saias, D.; Robert, Ph.; Boret, S.; Billard, C.; Bouche, G.; Belot, Didier; Ancey, P.

doi:10.1109/jssc.2003.819170

Cited by 36 publications

(13 citation statements)

References 8 publications

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“…A small voltage, V heat , is applied across the ends of the upper bridge heater electrode to pass a heating current, I heat . The temperature increase causes the bridge to deflect by thermal expansion mismatch between the top heater Al and the structural SiC [14], and by a slight reduction in the Young's modulus of the SiC with temperature [15]. This deflection that increases with temperature results in a lower pull-in voltage, according to (3).…”

Section: Thermal Actuationmentioning

confidence: 99%

Low actuation voltage silicon carbide RF switches for MEMS above IC

Cicek

Mahdavi

Nabki

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.

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Section: Thermal Actuationmentioning

confidence: 99%

Low actuation voltage silicon carbide RF switches for MEMS above IC

Cicek

Mahdavi

Nabki

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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“…2 shows the mechanical design of the switch, which is actuated by electro-thermal force and electrostatic force at the same time, and then latching the switching status by electrostatic force only. Since thermal actuator relatively need low voltage compare to electrostatic actuator and electrostatic force need almost no power to maintain the switching state [3]. Taking the advantages from both actuation mechanisms, the benefits of the design are very low actuation voltage and low power consumption.…”

Section: The Design Of Rf Mems Switchesmentioning

confidence: 99%

RF characteristics of dual-actuation CMOS-MEMS RF switches

Ko¹,

Lee²,

Huang³

2009

2009 59th Electronic Components and Technology Conference

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The capacitive type of radio frequency microelectromechanical systems (RF MEMS) switch is investigated for low driving voltages and low power consumption. The RF MEMS switch is actuated by electro-thermal forces and electrostatic forces at the same time, and then held the status by electrostatic forces only after driving. We also use complementary metal oxide semiconductor (CMOS) technology to integrate MEMS devices and integrated circuits (ICs) into a monolithic chip. The RF MEMS switch is fabricated using standard CMOS process, double poly-silicon four metal (2P4M), and the wet etching of MEMS fabrication is then used for post-processed. Experimental results show that the both actuation mechanisms, electro-thermal and electrostatic forces, are workable. The pull-in voltage of the switch for driving is about 7 volts. The insertion loss and the isolation of RF switch at a frequency of 5 GHz are 2.5 dB and 1.6 dB, respectively. I. IntroductionMore and more communication standards are put in a cell phone such as GSM, WCDMA, Bluetooth, WiMAX, WLAN, GPS, and so on. Each standard has its own RF characteristics including central frequency, bandwidth, and gain. In order to simplify these RF blocks and cut down cost, reconfigurable RF front-end system might be a good solution for communication system of next generation. For a reconfigurable RF front-end, many MEMS technologies might use in the various applications, including high-Q filters, resonators, tunable capacitors, switches, etc. Among these components, the switch is one of the commonly used devices. Compare to PIN (positive-intrinsic-negative) or FET (fieldeffect transistor) diode switches, RF MEMS switches offer a substantially higher performance (e.g., isolation and insertion loss) at high frequency applications. In state-of-the-art, the packaged single-pole N-throw switches have been used in portable units and base stations. Besides, MEMS switches have been used in phase shifters and switching networks for defense, telecommunication, and systems satellite communications up to 20 GHz [1].On the other hands, parasitic capacitance turns into an important issue for the RF module design. The CMOS technique might be a suitable platform to integrate the RF MEMS components and circuits. There are several benefits for CMOS-MEMS such as reduced cost, improved yield, increased performance, and improved value. The CMOS-MEMS technology is utilizing the CMOS layers to pattern the layout of MEMS components and then using dry-etching or wet-etching post-processed techniques to release the MEMS structure to form the movable parts. Then the MEMS parts made by CMOS process can easily integrate with IC on chip.

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“…Miniature systemsinvolving contacts such as microelectromechanical switches and magnetic storage head-diskinterfaces include system dynamics during normal operation [1][2][3][4]. Typical microelectromechanical switches operate in a single directional dynamic motion, where two surfaces repeatedly approach, contact, and retract with a specified velocity.…”

Section: Introductionmentioning

confidence: 99%

Dynamic adhesive forces in rough contacting bodies including normal and sliding conditions

Yeo

Lee

Polycarpou

2012

Journal of Adhesion Science and Technology

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Using a high-resolution, high-dynamic bandwidth capacitive force transducer and two piezoelectric actuators, adhesive pull-off forces between nominally flat rough silicon surfaces were measured under various dynamic conditions in normal and tangential directions and environmental humidity levels. The upper specimen approached and retracted with a constant velocity in the vertical (normal) direction, while the lower specimen started moving in the horizontal (tangential) direction during the middle of the contact. The experiments were performed under 35 and 60% relative humidity conditions. It was found that sliding of the contacting surfaces led to a significant reduction in pull-off forces under lowhumidity contact conditions, whereas it caused higher pull-off forces under partially wet contact conditions. Comparing the effects of sliding velocity and sliding distance on the measured pull-off force values, it was found that the sliding distance played an important role in the increase in pull-off forces.

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An above IC MEMS RF switch

Cited by 36 publications

References 8 publications

Low actuation voltage silicon carbide RF switches for MEMS above IC

Low actuation voltage silicon carbide RF switches for MEMS above IC

RF characteristics of dual-actuation CMOS-MEMS RF switches

Dynamic adhesive forces in rough contacting bodies including normal and sliding conditions

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