An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability

“…We consider the threshold voltage of transistors due to process variations as Gaussian random variables [20]. The 3r of the threshold voltages were set to 20% of their nominal values [18]. The CDF value at each RSNM0 shows the percentage of the cells whose read SNM values are smaller than RSNM0.…”

“…(32), we may make use of accurate models for SNM which are functions of the threshold voltages of transistors (see, e.g., [16][17][18]). Note that these models do not consider SBD.…”

Analytical Modeling of Read Margin Probability Distribution Function of Static Random Access Memory Cells in Presence of Process Variations and Negative Bias Temperature Instability Effect

“…The derivation of an analytical model for this parameter is complicated and the resulting expressions are very long and involved (see, e.g., ref. 16). Thus, including the effect of process variations and NBTI in its model does not provide much insight to the designer.…”