An Accurate and Verilog-A Compatible Compact Model for Graphene Field-Effect Transistors

Landauer, Gerhard Martin; Jiménez, David; González, José

doi:10.1109/tnano.2014.2328782

Cited by 70 publications

(58 citation statements)

References 33 publications

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“…Fluctuations of the trapped charge δQt can cause a variation in the chemical potential δVc which can lead to a change of charges that depend directly on the chemical potential such as the graphene charge, the top gate and the back gate charge. By applying charge conservation law and by considering a linear dependence of the quantum capacitance Cq and the chemical potential Vc (Cq=k•|Vc|) [45][46] , with k defined in Supplementary Info A, the following expression is derived:…”

Section: Resultsmentioning

confidence: 99%

Understanding the bias dependence of low frequency noise in single layer graphene FETs

et al. 2018

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This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain bias conditions for different channel lengths. A new analytical model that accounts for the propagation of the local noise sources in the channel to the terminal currents and voltages is proposed in this paper to investigate the noise bias dependence. Carrier number and mobility fluctuations are considered as the main causes of low frequency noise and the way these mechanisms contribute to the bias dependence of the noise is analyzed in this work. Typically, normalized low frequency noise in graphene devices has been usually shown to follow an M-shape dependence versus gate voltage with the minimum near the charge neutrality point (CNP). Our work reveals for the first time the strong correlation between this gate dependence and the residual charge which is relevant in the vicinity of this specific bias point. We discuss how charge inhomogeneity in the graphene channel at higher drain voltages can contribute to low frequency noise; thus, channel regions nearby the source and drain terminals are found to dominate the total noise for gate biases close to the CNP. The excellent agreement between the experimental data and the predictions of the analytical model at all bias conditions confirms that the two fundamental 1/f noise mechanisms, carrier number and mobility fluctuations, must be considered simultaneously to properly understand the low frequency noise in graphene FETs. The proposed analytical compact model can be easily implemented and integrated in circuit simulators, which can be of high importance for graphene based circuits' design.

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Section: Resultsmentioning

confidence: 99%

Understanding the bias dependence of low frequency noise in single layer graphene FETs

et al. 2018

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“…The quantum capacitance is also considered during the calculation of (1) [15]. In stead of using constant carrier mobility, an effective carrier mobility is proposed in this work to achieve more accurate results.…”

Section: A Drift-diffusion Transport Modelmentioning

confidence: 99%

Accurate modelling of graphene field effect transistor for wireless communications

Tian

Katsounaros

Smith

et al. 2016

2016 10th European Conference on Antennas and Propagation (EuCAP)

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This article presents a DC model for graphene field effect transistor with improved accuracy for wireless communications. The model takes into account the mobility difference between electron and hole, accurately modelling the carrier transport in the graphene channel. In addition, the variations of mobility against carrier density is also included in this model. Excellent agreement has been achieved between the modelIed results and measurement data.

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“…Figure 3 shows the numerical solution of Vc with respect to different Vgs. In SPICE, a solver subcircuit can be built to solve for Vc iteratively as the simulation goes, as demonstrated in SPICE models designed for other emerging transistors [5,33,34]. The solver approach, although often feasible, significantly increases the computation time.…”

Section: Spice-compatible Current Modelingmentioning

confidence: 99%

“…As we arrived at closed-form solutions for all the equations used in the model, it is a more efficient SPICE model than those in [5,33,34] which require additional solver structures for non-closed-form quantities.…”

Section: Full Transistor Model In Spicementioning

confidence: 99%

A SPICE model of flexible transition metal dichalcogenide field-effect transistors

Chen

Sun

Chen

2015

Proceedings of the 52nd Annual Design Automation Conference

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This paper presents the first SPICE model of the transition metal dichalcogenide (TMD) field-effect transistor (FET), which is a promising candidate for flexible electronics. The model supports different transistor design parameters such as width, length, oxide thickness, and various channel materials (MoS 2 , WSe 2 , etc.), as well as the applied strain, which enables the evaluation of transistor-and circuit-level behavior under process variation and different levels of bending. We performed SPICE simulations on digital logic gates to explore the design space of both MoS 2 -and WSe 2 -based transistors, and to evaluate the projected performance of these circuits under applied strain. Our simulations show that WSe 2 circuits outperform MoS 2 and Si-based CMOS in terms of energy-delay product (EDP) by up to 1 order of magnitude, depending on applications. Finally, we investigate TMDFET's behavior under process variation.

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An Accurate and Verilog-A Compatible Compact Model for Graphene Field-Effect Transistors

Cited by 70 publications

References 33 publications

Understanding the bias dependence of low frequency noise in single layer graphene FETs

Understanding the bias dependence of low frequency noise in single layer graphene FETs

Accurate modelling of graphene field effect transistor for wireless communications

A SPICE model of flexible transition metal dichalcogenide field-effect transistors

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