An Accurate Bandgap-Based Power-on-Detector in 14-nm CMOS Technology

Shor, Joseph; Zilberman, Dror

doi:10.1109/tcsii.2015.2505961

Cited by 12 publications

(6 citation statements)

References 12 publications

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“…Table I shows the performance and comparison summary of the proposed POR circuit with previous works. The quiescent current of the proposed POR circuit is 2.93 nA, which is much smaller than that of bandgap-based POR circuits [19,21]. Meanwhile, the proposed POR circuit has over 8x and 6x lower trip voltage deviation compared to the POR circuit proposed in [19,21].…”

Section: Measurement Results and Comparisonmentioning

confidence: 87%

“…The quiescent current of the proposed POR circuit is 2.93 nA, which is much smaller than that of bandgap-based POR circuits [19,21]. Meanwhile, the proposed POR circuit has over 8x and 6x lower trip voltage deviation compared to the POR circuit proposed in [19,21]. While the power consumption of the proposed POR circuit is 2x and 3x more than that of delay-based POR circuits [14,28], it has over 196x and 182x lower trip voltage deviation compared to the POR circuits [14,28], respectively.…”

Section: Measurement Results and Comparisonmentioning

confidence: 87%

“…Recently reported POR circuits can be divided into two main categories. The first kind of POR circuits employs a bandgap to generate a high-accuracy reference voltage, which is compared with the supply voltage by a comparator to get a trip voltage [16,17,18,19,20,21,22]. The trip voltage of the POR circuit is determined by the reference voltage of the bandgap and a high-accuracy trip voltage can be achieved.…”

Section: Introductionmentioning

confidence: 99%

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A 0.6V 1.76nW power on reset circuit with high accuracy

Wang

Ren

et al. 2022

IEICE Electron. Express

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A low voltage high-accuracy power on reset circuit with an ultra-low quiescent current is proposed in this paper. The circuit employs a 5-transistor voltage reference with a good temperature stability instead of bandgap to provide a precise reference voltage, which is compared with the supply voltage to generate an accurate trip voltage. A 4-transistor complementary-to-absolute-temperature voltage reference is proposed for temperature compensation and reduces significantly the trip voltage deviation. The proposed circuit is implemented in 55-nm CMOS process with an area of 2080 µm 2 . The measurement results show that the trip-voltage deviation is only 5 mV from −40 • C to 125 • C. And it achieves a power consumption of 1.76 nW at 0.6 V.

show abstract

Section: Measurement Results and Comparisonmentioning

confidence: 87%

Section: Measurement Results and Comparisonmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A 0.6V 1.76nW power on reset circuit with high accuracy

Wang

Ren

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Several POR circuits have been displayed in previous works [1][2][3][4][5][6][7][8][9]. These POR circuits can be divided into voltagereference-based POR circuits and delay-based POR circuits.…”

Section: Introductionmentioning

confidence: 99%

“…These POR circuits can be divided into voltagereference-based POR circuits and delay-based POR circuits. The voltage-reference-based POR circuits [1][2][3][4][5] employ a bandgap and a voltage comparator to get high accuracy tripvoltage, which is robust to PVT variations. But this kind of POR circuits have large quiescent current, usually several μA.…”

Section: Introductionmentioning

confidence: 99%

A 0.5V 36nW 10-Transistor Power-on-Reset Circuit with High Accuracy

You

Jia

Qiao

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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In this paper, a low voltage high accuracy 10transistor power-on-reset circuit with brown-out-reset function is proposed. A native NMOS current reference based architecture is proposed to get high accuracy trip-voltage with a small area and power consumption. By adjusting the number of native NMOS transistors, a stable hysteresis window is obtained. Post-layout simulation results based on SMIC 55nm CMOS process show that the trip-voltage deviation of the proposed power-on-reset circuit is only 34mV under different temperature and process corners. Also, the trip-voltage of the proposed power-on-reset circuit shows great robustness to supply ramp time. The power consumption of the proposed circuit is as low as 36nW at 0.5V. Since the proposed power-onreset circuit consists of only 10 transistors, the area is as low as 67.5μm 2 .

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A Robust Low‐Power Power‐On‐Reset Circuit With Dual Threshold Method

He,

Xie,

et al. 2024

Circuit Theory & Apps

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In this paper, a robust low‐power power‐on‐reset (POR) circuit with dual threshold method is proposed. The current‐based circuit exhibits good robustness with respect to process, voltage, temperature, and supply ramp variations. In contrast to conventional delay‐based pulse generation approaches, a dual threshold method is introduced to generate POR and brown‐out‐reset (BOR) pulse signals, resulting in ultralow quiescent current and a compact area. Implemented in the 55‐nm CMOS process, the proposed circuit achieves an accurate trigger‐point voltage with a temperature coefficient of 90.4 ppm/°C and a deviation to the ramp time of 2.9% for a range from 100 μs to 1 s. Furthermore, the quiescent current and active area are 0.3 nA and 4834 μm2, respectively, making it particularly suitable for energy harvesting systems.

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An Accurate Bandgap-Based Power-on-Detector in 14-nm CMOS Technology

Cited by 12 publications

References 12 publications

A 0.6V 1.76nW power on reset circuit with high accuracy

A 0.6V 1.76nW power on reset circuit with high accuracy

A 0.5V 36nW 10-Transistor Power-on-Reset Circuit with High Accuracy

A Robust Low‐Power Power‐On‐Reset Circuit With Dual Threshold Method

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