An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

Cho, Moon-Kyu; Song, Ickhyun; Kim, Jeong‐Geun; Cressler, John D.

doi:10.1109/lmwc.2016.2537055

Cited by 13 publications

(9 citation statements)

References 10 publications

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“…As evident from Table 7, in comparison to previous researches [10][11][12], the results of the current study are in the highest isolation between transmitter and receiver (36 dB). In addition, it is the only selectable RF switch that is able to operate with different frequencies using single hardware and thus, overcoming the interference issue.…”

Section: Comparison Between the Previous Research Work And This Worksupporting

confidence: 39%

“…It is used to support TDD communication such as in WiMAX and LTE. From the literature, DPDT switches could be designed and used in applications such as phase shifter [10,11], low cost X-band antenna [12], wideband control circuits (attenuators and true time delay elements), Ultra-Wide Band (UWB) applications microwave imaging applications [11], multi-input multi-output (MIMO) system, WLAN [13] and digital cellular handsets [14].…”

Section: Introductionmentioning

confidence: 99%

“…There are several types of configurations to perform DPDT switching function such as SOI-type (allocating the actuators and the waveguides in separate layers of an SOI wafer) [10], absorptive (four parallel-and cross-connected series transistors) [12], bi-directional [11], reflective [13] and ring [14] configurations. Besides, there is a back to back configuration, where two Single Pole Double Throw (SPDT) switches are connected together as a DPDT switch [9].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, to increase the switch's isolation, researchers have reported different techniques such as layer-wise waveguide/actuator [10], floating body and N-well [12], bi-directional distributed amplifier [11]. These techniques were implemented in integrated circuit RF switches only.…”

Section: Introductionmentioning

confidence: 99%

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Fixed and Selectable Multiband Isolation of Double Pole Double Throw Switch Using Transmission Line Stub Resonators for Wimax and Lte

Shairi¹,

Zakaria²

2017

PIER B

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Abstract-A novel selectable multiband isolation of Double Pole Double Throw (DPDT) switch with switchable transmission line stub resonators has been proposed for applications of WiMAX and LTE in 2.3 and 3.5 GHz bands. In this paper, two DPDT switch designs are proposed; the first design is a fixed DPDT switch, and the second is a selectable DPDT switch. The second design allows selecting only one band and unselecting the other or selecting both of them. However, the first design does not allow so. The transmission line stub resonator used in this design is an open stub resonator with quarter wave of the electrical length. By using a simple mathematical model, the theory of the transmission line stub resonator was discussed where it can be cascaded and resonated at center frequencies of 2.3 and 3.5 GHz. Moreover, the cascaded transmission line stub resonators can be reconfigured between allpass and bandstop responses using discrete PIN diodes. The key advantage of the proposed DPDT with switchable transmission line stub resonators is a multiband high isolation with minimum number of PIN diodes. Therefore, the simulated and measured results showed less than 3 dB of insertion loss, greater than 10 dB of return loss and higher than 30 dB of multiband isolation in 2.3 and 3.5 GHz bands.

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Section: Comparison Between the Previous Research Work And This Worksupporting

confidence: 39%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fixed and Selectable Multiband Isolation of Double Pole Double Throw Switch Using Transmission Line Stub Resonators for Wimax and Lte

Shairi¹,

Zakaria²

2017

PIER B

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“…5-8 RF switch matrices have been implemented by silicon-on-insulator (SOI), 5 PIN-diode, 6 and SiGe. 7 These processes have excellent RF performance because of high substrate resistance and small parasitic capacitance. But, in order to decrease the production cost by integrating RF frontend and analog-digital circuits into a small-sized full transceiver on chip, a bulk CMOS process should be used.…”

Section: Introductionmentioning

confidence: 99%

High isolation and high linearity double‐pole double‐throw CMOS switch matrix for Ka‐band wireless transceiver front‐end IC

Park

Lee

Kim

et al. 2018

Micro & Optical Tech Letters

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This letter proposes a double‐pole double‐throw (DPDT) switch with high isolation and high linearity using a 65‐nm CMOS process. To improve the isolation, resonant inductors are employed for the core switches, which are composed of a single‐stacked NMOS with gate‐body floating techniques. And, the switch is controlled by a cross‐biasing technique to increment the power linearity. The active circuits are designed separately from the passive elements to reduce the interference. The core area of the proposed switch excluding all of the pads is 380 × 300 μm2. The minimum insertion loss is 2.57 dB at 23 GHz and maximum isolation is 39.7 dB at 26 GHz, respectively. The third‐order intermodulation intercept point (IIP3) is 37 dBm at 28 GHz.

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A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

2020

Self Cite

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This paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirectional distributed amplifiers (BDAs). The reconfigurable functionality and fast mode selection are obtained by using the absorptive series-shunt switches. The proposed power divider/combiner provides four different operational states depending on the control inputs for the BDAs and the series-shunt switches. The dual-path mode supports both divider and combiner operations, and the measured gain is greater than 7.8 dB and the isolation between output ports is better than 23 dB over the 3-dB bandwidth of 2-23 GHz. The measured noise figure (NF) of the dual-path mode is below 10 dB, while maximum amplitude and phase imbalances are 0.2 dB and 1.8 degrees, respectively. The single-path mode shows a measured gain of > 7.8 dB, and a port-to-port isolation > 35 dB. The measured NF is below 12 dB from 8 to 26 GHz. In addition, the proposed circuit shows the maximum output 1-dB compression point (OP1dB) of 4.6 dBm, and good matching characteristics, with a DC power consumption of 120 mW. The chip area of the reconfigurable two-way SiGe bi-directional active power divider/combiner is 1.43 mm × 0.92 mm. INDEX TERMS Active power divider/combiner, bi-directional amplifier (BDA), octave bandwidth, phased array antenna, reconfigurable, SiGe, SiGe BiCMOS, wideband.

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An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

Cited by 13 publications

References 10 publications

Fixed and Selectable Multiband Isolation of Double Pole Double Throw Switch Using Transmission Line Stub Resonators for Wimax and Lte

Fixed and Selectable Multiband Isolation of Double Pole Double Throw Switch Using Transmission Line Stub Resonators for Wimax and Lte

High isolation and high linearity double‐pole double‐throw CMOS switch matrix for Ka‐band wireless transceiver front‐end IC

A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

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