Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
DOI: 10.1109/ispsd.1997.601434
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An active control gate drive circuit for IGBTs to realize low-noise and snubberless system

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Cited by 30 publications
(14 citation statements)
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“…Yet, a simple increase in the gate resistance will greatly enlarge the loss. Thus, the authors have proposed a gate drive method by which only the reverse recovery time of the diode and the fall time of the IGBT are prolonged [11,12]. Figure 18 shows the di / dt control gate drive circuit proposed by the authors.…”
Section: Switching Waveform Controlmentioning
confidence: 99%
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“…Yet, a simple increase in the gate resistance will greatly enlarge the loss. Thus, the authors have proposed a gate drive method by which only the reverse recovery time of the diode and the fall time of the IGBT are prolonged [11,12]. Figure 18 shows the di / dt control gate drive circuit proposed by the authors.…”
Section: Switching Waveform Controlmentioning
confidence: 99%
“…In addition, as a method of reducing the radiated EMI noise, a di / dt control gate drive circuit is hereby proposed [11,12]. This circuit is a means of reducing only dv / dt at reverse recovery of a diode and the turn-off surge voltage of IGBT.…”
Section: Introductionmentioning
confidence: 99%
“…Most of this prior work has been targeted at improved voltage sharing among series-connected switches without providing external control of the or rates. An exception is [8], which uses a closed-loop op-amp circuit to actively control the collector voltage during switching transients. Flexible and control techniques are presented in this paper that have been developed to achieve the following two specific objectives: 1) independent control of the output terminal and rates that are adjusted electronically over a wide range without the need to change passive components and 2) maximum compatibility with integrated circuit design techniques that will encourage their eventual implementation in power module configurations that include both the power switches and their integrated gate drives.…”
Section: Introductionmentioning
confidence: 99%
“…Several techniques have been reported for providing such features using gate control schemes [5][6][7][8][9]. Most of this prior work has been targeted at improved voltage sharing among series-connected switches without providing external control of the dv/dt or di/dt rates.…”
Section: Introductionmentioning
confidence: 99%
“…Most of this prior work has been targeted at improved voltage sharing among series-connected switches without providing external control of the dv/dt or di/dt rates. An exception is [8], which uses a closed-loop op-amp circuit to actively control the collector voltage during switching transients.…”
Section: Introductionmentioning
confidence: 99%