An Active Voltage Balance Method Based on Adjusting Driving Signals Time Delay for Series-Connected IGBTs

Wang, Tao; Lin, Heyun; Liu, Shengsheng; Zhao, Min

doi:10.1109/jestpe.2021.3069577

Cited by 4 publications

(3 citation statements)

References 42 publications

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“…Generally, it is complex to get the analytical model of the voltage rising time of the SiC MOSFETs. In review of the turnoff process of the SiC MOSFETs, the external drain current i ds equals the channel current i ch1/2 and the charging current i oss1/2 of the parallel capacitance of the devices [25,33], as demonstrated in Figure 3.…”

Section: Snubber Capacitor Designmentioning

confidence: 99%

“…The authors in [21][22][23] have been working on these topics and propose different solutions, mainly focusing on the active voltage balancing method to solve the challenge of the voltage sharing among the devices. Generally, the gatesource voltage and gate driving delay time are the two main control freedoms in the feedback loop [24][25][26]. Considering the various efforts in exploring the series connection of SiC MOS-FETs, however, there is still a lack of the operation assessment of the active voltage balancing circuits in the high voltage high power converters.…”

Section: Introductionmentioning

confidence: 99%

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A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

Zhu

et al. 2022

IET Power Electronics

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Implementation of the series connection of the SiC MOSFETs in medium voltage (MV) high power converters faces a series of challenges, including the electrical/thermal stress imbalance, insulation coordination design, high dv/dt elimination and robustness under variable operating conditions. This paper stresses these challenges and proposes a comprehensive design of a 9.6 kV/200 A power block based on the series connection of SiC MOSFETs. The power block has been verified under the continuous operation, which demonstrates the highly efficient and reliable operation under the variable switching current condition. Afterward, performance screening in a 5 kV/1 MW inverter is conducted to assess the efficiency in MV converters. Compared with the advanced high voltage high power devices, the proposed power block demonstrates fast switching speed and low switching loss, which indicates that the series connection of SiC MOSFETs is a promising technique to expand the operation voltage/power of the SiC MOSFETs to the MV megawatt level. The proposed design can be expanded to other specifications as well.

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Section: Snubber Capacitor Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

Zhu

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…The main drawback of using one 2L-VSC followed by step-down transformer is the employment of large number of series-connected IGBTs to meet the required high-voltage ratings. As a result, the active gate control [15][16][17][18] should be applied to ensure proper dynamic voltage sharing between the involved IGBTs per each valve. Moreover, the induced dv/dt stresses on the transformer insulation is high.…”

Section: Introductionmentioning

confidence: 99%

Input‐voltage and output‐current equalization of series‐in parallel‐out three‐phase multi‐module voltage source converter‐based high voltage direct current shunt tap

Elserougi

2022

Circuit Theory & Apps

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Conventionally, high voltage direct current (HVDC) shunt taps are used to feed a three‐phase local network by employing a DC‐AC 2‐Level voltage source converter (2L‐VSC), where its DC side is connected to the DC‐link voltage, while its AC side is fed to a step‐down transformer to meet the local network voltage level. To meet the high‐voltage ratings of the 2L‐VSC, series‐connected Insulated‐Gate Bipolar Transistors (IGBTs) should be employed with proper static and dynamic voltage sharing of the involved IGBTs per each valve. To avoid the complexity and challenges of series‐connected devices, an alternative solution for HVDC shunt tap is proposed in this paper, where DC‐AC inverter based on series‐input parallel‐output multi‐module 2L‐VSCs with input‐voltages and output‐currents equalization is employed, which enables employing of IGBTs with relatively medium‐voltage rating. In the proposed architecture, the AC sides of VSCs are fed to step‐down transformers, where the transformers' secondary sides are connected in parallel for current sharing purpose. Simulation results for normal as well as abnormal operating condition are presented to show the dynamic performance of the proposed architecture and validate the presented voltage and currents equalization techniques. The proposed architecture is also compared with the other existing options to show the effectiveness of the suggested approach.

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Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

Wang

Jørgensen

Liu

et al. 2023

IEEE Trans. Ind. Electron.

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Passive clamping snubbers for voltage balancing (VB) series connected power devices exhibit strong applicability and high robustness, moreover, they are particularly suitable for the emerging fast-switching silicon-carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs). However, the compromise still exists as a better VB performance comes at a penalty of a larger loss of snubber. Consequently, in this paper, novel adaptive-impedance "snubbers" are proposed for series connected SiC MOSFETs on the basis of converterbased self-powered gate driver design, and a better tradeoff is achieved between loss and VB both in static and dynamic states. Further, the proposed passive VB strategy could be combined with an active delay control strategy by introducing an extra closed-loop controller. Benefiting from a more accurately established small-signal system model, the closed-loop numerical parameters are easier to design. As a result, well-balanced voltage distribution is realized during the continuously switching process of series connected SiC MOSFETs. To verify the effectiveness, a comprehensive analysis is firstly provided as guidance, followed by the corresponding detailed hardware and software design. Finally, the experiments are conducted by using two SiC MOSFETs, which show excellent VB performance at a 110 kV/µs switching speed. 1

show abstract

An Active Voltage Balance Method Based on Adjusting Driving Signals Time Delay for Series-Connected IGBTs

Cited by 4 publications

References 42 publications

A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

Input‐voltage and output‐current equalization of series‐in parallel‐out three‐phase multi‐module voltage source converter‐based high voltage direct current shunt tap

Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

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