An advanced III-V-on-silicon photonic integration platform

Hu, Yingtao; Liang, Di; Beausoleil, Raymond G.

doi:10.29026/oea.2021.200094

Cited by 25 publications

(12 citation statements)

References 41 publications

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“…A promising solution is using monolithic hybrid platforms [ 47 , 48 ], which provide a smaller footprint and better reliability than conventional hybrid integration methods. It is worth noting that both platforms have optical sources with a bandwidth higher than 20 nm [ 48 , 49 ].…”

Section: Discussionmentioning

confidence: 99%

Design and Modeling of a Fully Integrated Microring-Based Photonic Sensing System for Liquid Refractometry

Voronkov

Zakoyan

Ivanov

et al. 2022

Sensors

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The design of a refractometric sensing system for liquids analysis with a sensor and the scheme for its intensity interrogation combined on a single photonic integrated circuit (PIC) is proposed. A racetrack microring resonator with a channel for the analyzed liquid formed on the top is used as a sensor, and another microring resonator with a lower Q-factor is utilized to detect the change in the resonant wavelength of the sensor. As a measurement result, the optical power at its drop port is detected in comparison with the sum of the powers at the through and drop ports. Simulations showed the possibility of registering a change in the analyte refractive index with a sensitivity of 110 nm per refractive index unit. The proposed scheme was analyzed with a broadband source, as well as a source based on an optoelectronic oscillator using an optical phase modulator. The second case showed the fundamental possibility of implementing an intensity interrogator on a PIC using an external typical single-mode laser as a source. Meanwhile, additional simulations demonstrated an increased system sensitivity compared to the conventional interrogation scheme with a broadband or tunable light source. The proposed approach provides the opportunity to increase the integration level of a sensing device, significantly reducing its cost, power consumption, and dimensions.

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Section: Discussionmentioning

confidence: 99%

Design and Modeling of a Fully Integrated Microring-Based Photonic Sensing System for Liquid Refractometry

Voronkov

Zakoyan

Ivanov

et al. 2022

Sensors

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“…At RT, device output optical power from one facet of 4.2 mW and threshold current density of 813 A cm −2 have been reported. Furthermore, a recent review by Hu et al [101] summarized recent research work on this regrowth on bonded template platform. In 2020, the study by Fujii et al [89] demonstrates a similar integration approach of epitaxial growth on InP-on-insulator substrate.…”

Section: Iii-v Integration On Si Through Direct Growthmentioning

confidence: 99%

“…Furthermore, a recent review by Hu et al. [ 101 ] summarized recent research work on this regrowth on bonded template platform. In 2020, the study by Fujii et al.…”

Section: Iii–v Lasers On Siliconmentioning

confidence: 99%

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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“…This inherits some advantages of direct growth, such as enabling III−V growth and processing on larger silicon substrates, thus reducing costs, while the bonding eliminates egregious sources of defects such as lattice mismatch and crystal structure mismatch. 5 Additionally, the postbond regrowth technique has advantages over the full-stack-bonding heterogeneous integration method with increased flexibility for dense and interspersed integration. Multiple epitaxial structures for different photonic integrated circuit devices may be integrated through separate regrowths by masking off specific sections of the wafer.…”

Section: Introductionmentioning

confidence: 99%

“…The approach explored here is a hybrid of these two methods that involves first bonding a thin high-quality III–V template layer onto silicon and then growing the laser structure on top. This inherits some advantages of direct growth, such as enabling III–V growth and processing on larger silicon substrates, thus reducing costs, while the bonding eliminates egregious sources of defects such as lattice mismatch and crystal structure mismatch . Additionally, the postbond regrowth technique has advantages over the full-stack-bonding heterogeneous integration method with increased flexibility for dense and interspersed integration.…”

Section: Introductionmentioning

confidence: 99%

Dislocation Formation and Filtering in III–V Regrowth on GaAs Bonded on Si

Hughes

Dumont

et al. 2022

Crystal Growth & Design

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We develop a process to regrow thick III-As layers on a thin bonded template of GaAs on Si and uncover how to control the formation of threading dislocations. Such a hybrid approach potentially combines the advantages of full device wafer bonding and direct epitaxial growth for III−V optoelectronic integration on Si. One lingering challenge to this postbond regrowth technique, however, is thermal expansion mismatch between the film and substrate, leading to high dislocation densities when growing beyond the critical thickness. We find that the threading dislocation density of a simple 2.2 μm GaAs regrowth film rises as high as 8 × 10 6 cm −2 , orders of magnitude higher than the original template density. Using compressively strained dislocation blocking layers, threading dislocation densities are reduced by as much as 30× down to 2.7 × 10 5 cm −2 , and it is shown that, unexpectedly, most dislocations nucleate during cooldown following growth when the strain state reverses from compressive to tensile because of thermal expansion mismatch. Finally, potential design modifications are proposed to improve dislocation filtering efficacy and for growing device structures.

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An advanced III-V-on-silicon photonic integration platform

Cited by 25 publications

References 41 publications

Design and Modeling of a Fully Integrated Microring-Based Photonic Sensing System for Liquid Refractometry

Design and Modeling of a Fully Integrated Microring-Based Photonic Sensing System for Liquid Refractometry

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Dislocation Formation and Filtering in III–V Regrowth on GaAs Bonded on Si

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