An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications

Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs

“…In the GaAs technology, the drain current response to gate-and drain-voltage pulses was extensively utilized [5,6] as a means of investigating trapping effects. It was also shown that pulsed current-voltage characteristics can serve as a indicator of microwave power performance [7,8]. In the work presented here, the measured microwave power output in GaN-based HEMTs has been found to correlate well with the drain-current pulsed response.…”

Enhancement of f MAX of InP-based HEMTs by double-recessed offset gate process

“…A double-recess gate structure has been used previously in GaAs-based HEMTs to improve breakdown voltage, which in turn increases output power. [17] We form the double-recess gate structure by selectively etching the cap layers. Compared with the traditional doublerecess gate structure, the incompletely removed cap layer can effectively reduce the exposed area of the active region and inhibit the surface effects.…”

Success and Failure Part 1: In Celebration of Failure [MicroBusiness]

“…What followed was months of investigating why the current collapsed and optimizing the transistor design and fabrication process to reduce the effect. Ultimately, we were able to demonstrate excellent power transistor performance [1], [2]. Failure and disappointment had been turned into success and opportunity.…”