2013 15th European Conference on Power Electronics and Applications (EPE) 2013
DOI: 10.1109/epe.2013.6634642
|View full text |Cite
|
Sign up to set email alerts
|

An all SiC MOSFET high performance PV converter cell

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
20
0

Year Published

2014
2014
2020
2020

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 30 publications
(21 citation statements)
references
References 9 publications
1
20
0
Order By: Relevance
“…In addition, the SiC device has higher efficiencies for high power switching devices, which can operate at higher temperatures of ~600 °C without much change in their electrical properties compared with the Si devices (~200 °C). The SiC devices are one of the leading candidates of next generation power devices [5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the SiC device has higher efficiencies for high power switching devices, which can operate at higher temperatures of ~600 °C without much change in their electrical properties compared with the Si devices (~200 °C). The SiC devices are one of the leading candidates of next generation power devices [5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…As a case study, here the focus is on the use of both 650 V and 1200 V rated devices within a 3-level inverter topology, of common use in a range of applications including photo-voltaic, avionics, automotive, industrial. The investigations in [14] have pointed out the superior performance of SiC MOSFETs even as a drop-in replacement of Si, that is with devices using the same commercial type package (TO220 and TO247), in terms of efficiency, switching frequency capability, stability over temperature, circuit complexity and, to some extent, electro-magnetic signature. Fig.…”
Section: Performance In Applicationmentioning
confidence: 99%
“…In [13], the employment of 1200-V SiC JFETs realized a 5000-W three-phase inverter with a high switching frequency of 144 kHz. Recently, [15,16] reported all SiC inverters. Some authors [17][18][19] also gave a comparative study of Si-and SiC-based power converters.…”
Section: Introductionmentioning
confidence: 99%