An all-silicon laser based on silicon nanocrystals with high optical gains

Wang, Dong-Chen; Zhang, Chi; Zeng, Pan; Zhou, Wenjie; Ma, Lei; Wang, Haotian; Zhou, Zhen‐Qiang; Hu, Fei; Zhang, Shuyu; Lu, Ming; Wu, Xiang

doi:10.1016/j.scib.2018.01.006

Cited by 41 publications

(23 citation statements)

References 11 publications

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“…This is supported by previous reports on PL from SRO, which has been extensively studied in the past [ 2 , 3 , 15 , 18 , 19 , 21 ]. According to these, the bands with longer wavelengths is consistent with a combination of defects and QC-related emission.…”

Section: Resultssupporting

confidence: 88%

“…The use of nano-structured Si-based materials has been demonstrated to be a viable alternative for producing fully monolithic electrophotonic systems obtained solely by complementary metal oxide semiconductor (CMOS) techniques [1,2,3]. In particular, light emitters using SixNy-SiOx nano-bilayers are promising for several applications, due to the combination of a wide visible spectrum and well-controlled photoluminescence (PL) provided by silicon-rich oxide (SRO) [2], and the possibility of improving efficiency [1], carrier injection due to lower energy barriers [4], and quantum yields [5] provided by silicon nitride and oxynitrides for electroluminescence (EL).…”

Section: Introductionmentioning

confidence: 99%

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Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

González-Fernández

Juvert

Aceves-Mijares

et al. 2019

Sensors

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In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

González-Fernández

Juvert

Aceves-Mijares

et al. 2019

Sensors

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show abstract

“…While directly extracting light from a CMOS-compatible silicon substrate seemed to be an intractable task, the fast development of photonic interconnects 12,13 has enabled the development of all-silicon lasers in the telecommunication spectral window relying on stimulated Raman scattering 14,15 or gain in silicon nanocrystals 16 . Even though these devices were shown to operate with relatively high efficiencies, broad operation bandwidth 17 , and low bias thresholds 15 , an off-chip external optical pump source was still required.…”

Section: Introductionmentioning

confidence: 99%

Towards integrated tunable all-silicon free-electron light sources

et al. 2019

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Extracting light from silicon is a longstanding challenge in modern engineering and physics. While silicon has underpinned the past 70 years of electronics advancement, a facile tunable and efficient silicon-based light source remains elusive. Here, we experimentally demonstrate the generation of tunable radiation from a one-dimensional, all-silicon nanograting. Light is generated by the spontaneous emission from the interaction of these nanogratings with low-energy free electrons (2–20 keV) and is recorded in the wavelength range of 800–1600 nm, which includes the silicon transparency window. Tunable free-electron-based light generation from nanoscale silicon gratings with efficiencies approaching those from metallic gratings is demonstrated. We theoretically investigate the feasibility of a scalable, compact, all-silicon tunable light source comprised of a silicon Field Emitter Array integrated with a silicon nanograting that emits at telecommunication wavelengths. Our results reveal the prospects of a CMOS-compatible electrically-pumped silicon light source for possible applications in the mid-infrared and telecommunication wavelengths.

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“…Their compatibility with conventional microelectronic device fabrication techniques and materials makes them attractive for potential applications in integrated optoelectronic technologies [1]. In the last decade, a variety of Si photonic components, such as optical modulators, optical waveguides, and optical detectors, have been successfully received [2]. However, silicon-based luminescent devices have not yet been achieved and still have a long way to go.…”

Section: Introductionmentioning

confidence: 99%

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Yang

et al. 2018

Nanomaterials

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In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.

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An all-silicon laser based on silicon nanocrystals with high optical gains

Cited by 41 publications

References 11 publications

Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

Towards integrated tunable all-silicon free-electron light sources

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

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