Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Ma, Hong-Ping; Lu, Hong‐Liang; Yang, Jun; Li, Xiaoxi; Wang, Tao; Huang, Wei; Yuan, Guangjie; Комаров, Ф. Ф.; Zhang, David Wei

doi:10.3390/nano8121008

Cited by 23 publications

(20 citation statements)

References 54 publications

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“…4(a), and this transition layer was also often observed in other references [18], [19]. The Si-O-N film has an extensive range of optical bandgap from 2.9 to 6.2 eV according to different references [20], [21], and hence exists significant absorption in the solar-blind region.…”

Section: Resultssupporting

confidence: 69%

A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

et al. 2019

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To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO 2 /SiN x 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 0 0 1) double-polished sapphire substrate. When depositing SiN x , we found that employing NH 3 as nitrogen precursor instead of N 2 can simultaneously improve the peak reflectivity of filter stopband in the designed visible-blind region and the transmissivity in the solar-blind region. Research shows that it is associated with the H atom concentration in SiN x and the generation of Si-O-N transition layer at SiO 2 /SiN x interface. Finally, we obtained a high-performance SiO 2 /SiN x PC UV filter with a stopband reflectivity over 90% from 285 to 345 nm and a transmissivity over 80% in the solar-blind region. The UV filter is also demonstrated to have a good effect in improving the solar-blind/visible-blind photocurrent response rejection ratio of a back-illuminated AlGaN photodetector by depositing it to the back of the detector.

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Section: Resultssupporting

confidence: 69%

A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

et al. 2019

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“…The atomic concentrations of Si-N, N-O, and Si-O bonds in the film with a refractive index of 2.12 were 88.63%, 5.8%, and 5.58% [17], whereas those for the reference film were 70.9%, 14.13%, and 14.97%, respectively. The O 1s and Si 2p peaks were in agreement with the peaks reported in References [17][18][19]. The total amounts of Si and N peak intensity of the optimized film were 46.74% and 47.51%, respectively, while those of the reference film were 41.99% and 45%, respectively.…”

Section: Introductionsupporting

confidence: 88%

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

et al. 2020

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We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

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“…As the etching time increases, the SiO x layer corresponding to 532.7 eV becomes dominant. [ 26 ] The binding energy of the N 1s spectra is well matched with that of the Si 2p and O 1s spectra (Figure 1c). NN and NO bonds are observed for Si 3 N 4 and SiO x at 6 s and the NO bond is dominant at 12 s. The SiO 2 layer acts as a tunnel barrier to enhance low‐power and uniform resistive switching and minimize current overshoot.…”

Section: Figurementioning

confidence: 54%

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor

Choi

Kim

2020

Physica Rapid Research Ltrs

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Neuromorphic computing has the capacity to emulate the neural structure and the operation of the human brain with energyefficient and flexible processing. [1] When implementing a neuromorphic system on the hardware level, an array of memristors can be used as adaptive synapses. [2,3] In particular, vector matrix multiplication in a memristor has the advantage of greatly reducing the computational burden of the graphics processing unit. Basically, long-term retention is preferred for hardware-based neuromorphic systems in terms of energy efficiency. On the other hand, short-term memory (STM) is suitable for temporal/sequential data processing, which can be emulated by the loss of retention in a memristor. [4,5] Until now, the artificial synaptic devices of memristor type have been reported from a lot of materials to implement the bio-inspired computing. [6-13] SiN x is one of the core materials in the complementary metal oxide semiconductor (CMOS) process, where it is used as a passivating, buffer, masking, and chemical mechanical polishing stopper layer. It has also been used in nonvolatile memory applications, such as in NAND flash [14] and memristor devices. [15-24] The SiN x layer has a different form in flash memory as in charge trapping. The SiN x layer in a memristor acts as a resistive switching layer by controlling conductance with the applied electric

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Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Cited by 23 publications

References 54 publications

A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor

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Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Cited by 23 publications

References 54 publications

A High-Performance SiO2/SiN x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

A High-Performance SiO2/SiN x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiNx‐Based Memristor

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A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

A High-Performance SiO₂/SiN _x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor