An Amorphous-Silicon Operational Amplifier and Its Application to a 4-Bit Digital-to-Analog Converter

Tarn, Yi-Chuan; Ku, Pei-Cheng; Hsieh, Hsieh-Hung; Lu, Liang-Hung

doi:10.1109/jssc.2010.2043886

Cited by 66 publications

(55 citation statements)

References 8 publications

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“…Several Op-Amps, in different semiconductor material classes, have been reported for flexible electronics. [198][199][200][201] Many of these have poor performance in comparison to conventional Si technology. For example, an a:Si op-amp 198 as a part of a 4-b digitalto-analog converter on a glass substrate, investigated for threshold instability in a time varying form, shows varying threshold voltage when Op-Amp is stressed.…”

Section: -14mentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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Section: -14mentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…bending radius: 3 µm GMR sensor [ 32 ] in an external rigid bridge radii down to the micrometer range [ 5,23 ] render IGZO an attractive alternative to organic semiconductor-based devices. [ 26,31,[63][64][65][66] The operational amplifi er circuit (Figures 1 e,f and 2 b) consists of a differential stage with a common mode rejection feedback, a dual to single ended converter, and an additional common source output stage exhibiting an amplifi cation of 19 dB and a common mode rejection ratio of 44 dB. [ 58 ] In addition, two current sources (current mirrors) are included to enable circuit operation without external bias voltages.…”

Section: Doi: 101002/aelm201600188mentioning

confidence: 99%

Entirely Flexible On‐Site Conditioned Magnetic Sensorics

Münzenrieder

Karnaushenko

Petti

et al. 2016

Adv Elect Materials

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“…In recent years, one popular application of a-Si TFT technology is pixel circuits for active matrix liquid crystal display (AMLCD) [11] and active matrix organic light-emitting diode (AMOLED) [7], [12]. As a-Si TFT technology advances, not only pixel circuits but also large-scale analog circuits have been designed, for instance, shift register for gate driver [11], differential amplifier [13], embedded level shifter [14], and operational amplifier [15]. Examples of digital circuits include a pass-transistor multiplexer [16], an integrated row driver for high-resolution applications [17], an asynchronous finite impulse response filter [18], and pseudo-CMOS digital logic gates [19].…”

Section: A Flexible Tftmentioning

confidence: 99%

Flexible TFT Circuit Analyzer Considering Process Variation, Aging, and Bending Effects

Ma¹,

Wei²,

Li³

et al. 2014

J. Display Technol.

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This paper presents a SPICE-based simulator, FlexiAnalyzer, for flexible thin-film transistor (TFT) circuits. This simulator performs four types of analysis: yield analysis, aging analysis, performance analysis, and weak spot analysis. This simulator considers three important effects: 1) threshold voltage variation of manufacturing process; 2) threshold voltage shift due to aging effect; and 3) mobility change due to bending effect. Six different OLED pixel drivers designed in 8-m amorphous silicon TFT technology were used in simulation results. The proposed tool provides a good solution for designers to evaluate the performance and yield of flexible TFT circuits.Index Terms-Flexible TFT circuits, spice, circuit analyzer, bending effect, aging effect.

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An Amorphous-Silicon Operational Amplifier and Its Application to a 4-Bit Digital-to-Analog Converter

Cited by 66 publications

References 8 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Entirely Flexible On‐Site Conditioned Magnetic Sensorics

Flexible TFT Circuit Analyzer Considering Process Variation, Aging, and Bending Effects

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