An amorphous silicon photodetector for picosecond pulses

Auston, D. H.; Lavallard, P.; Sol, N.; Kaplan, D.

doi:10.1063/1.91276

Cited by 136 publications

(26 citation statements)

References 4 publications

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“…This conclusion is in good qualitative agreement with the results of autocorrelation function measurements in glow discharge deposited and ultrahigh vacuum deposited a-Si [3]. Now we discuss some conclusions from our experiments in order to estimate the recombination constant and the averaged capture cross-section of the recombination centres.…”

Section: Discussionsupporting

confidence: 87%

“…Typical carrier densities generated by the absorption of strong laser pulses are about lozo ~r n -~ [2]. Such a high carrier concentration causes a conductivity increase of several orders of magnitude, for example, a t carrier concentrations of about 1018 ~m -~ changes in the specific resistivity of amorphous silicon from 10' Rcm to about 20 Rcm were obtained [3]. On the other hand, refractive index changes in the order of 1 % can be obtained a t such high carrier concentrations [2].…”

Section: Introductionmentioning

confidence: 99%

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Comparative Studies of Fast Recombination Processes in Amorphous Silicon Films

Bergner

Brückner

Kerstan

et al. 1983

Physica Status Solidi (b)

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Comparative studies of recombination processes of laser-induced charge carriers in the picosecond range are performed in amorphous silicon films prepared by glow discharge technique, UHV evaporation, and sputtering. By means of time-resolved reflectivity and conductivity measurementa a two-step relaxation process is obtained, where the time of the fast recombination process decreases with increasing defect density. Some semiconductor parameters (recombination constant, capture cross-section, carrier mobility) are estimated using experimental results.Vergleichende Untersuchungen von Rekombinationsprozessen im Pikosekundenbereich bei laserinduzierter Ladungstragererzeugung werden an amorphen Siliziumschichten vorgenommen, die mit verschiedenen Verfahren (HF-Glimmentladung, UHV-Bedampfung, Zerstaubung) hergestellt werden. Mit Hilfe von zeitanfgelosten Reflexions-und Leitfahigkeitsmessungen wird ein Zwei-Stufen-RelaxationsprozeR registriert, wobei die schnelle Rekombinatiomzeit mit wachsender Defektdichte kiirzer wird. Unter Verwendung der experimentellen Ergebnisse werden einige Halbleiterparameter (Rekombinationsrate, Wirkungsquerschnitt, Beweglichkeit) abgeschatzt.

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Section: Discussionsupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Comparative Studies of Fast Recombination Processes in Amorphous Silicon Films

Bergner

Brückner

Kerstan

et al. 1983

Physica Status Solidi (b)

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show abstract

“…11.6(b)). Radiation damaged or implanted materials (Smith et al, 1981;Ketchen et al, 1986), amorphous materials (Auston et al, 1980) MBE grown composite materials such as low-temperature grown GaAs (Smith et al, 1989) were used for the switch.…”

Section: Auston Switchmentioning

confidence: 99%

Ultrafast charge carrier dynamics in organic (opto)electronic materials

Diesinger

Chan

Yin

et al. 2013

Handbook of Organic Materials for Optical and (Opto)electronic Devices

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“…To overcome this shortcoming, the idea was to use substrates having a shorter life time of the carriers such as GaAs [3] or InP [4], which allows to significantly increase the repetition frequency. Thereafter, and based on the same idea, different materials were used to fabricate photoswitches such as amorphous silicon [5], CdS 0.5 Se 0.5 [6], GaP [7], silicon on sapphire [8], Ge [9], CdS [10] and diamond [11]. All these materials benefit both of a short life time and a high resistivity.…”

Section: Introductionmentioning

confidence: 99%