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The temporal behaviour of photoinduced charge carriers in amorphous hydrogenated silicon films is studied by means of time‐resolved reflectivity measurements using a Nd:YAG laser. The investigated a‐Si:H films, deposited by the glow discharge technique under systematic variation of the silane—hydrogen pressure, show different structures and defects. The temporal behaviour of the non‐equilibrium charge carriers of all samples is determined by a two‐step relaxation process. In accordance with the model the photoexcited carriers relax from the conduction band to an intermediate state in the mobility gap and than to the ground state. The characteristic times of these relaxation processes are 30 to 85 ps and 0.75 to 2.5 ns, respectively. The influence of the structure of the a‐Si:H films on the relaxation times is discussed.

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