On the investigation of laser-induced carriers in silicon in the picosecond time range

Bergner, H.; Brückner, Volkmar

doi:10.1007/bf00620016

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…2(a)). This sharpening is probably due to the non-linear nature of the photo-induced re¯ectivity mechanism [9]. When the visible laser was focused to about 7 lm (the smallest visible spot we could obtain with this objective, due to either objective imperfection or misalignment), the PIR transition did not become sharper than about 9 lm (see Fig.…”

Section: Methodsmentioning

confidence: 93%

“…0.4, Ealing Electro-Optics, Herts, UK). Energy¯uence in the visible light spot was about 70 mJ/cm 2 on the silicon substrate surface, inducing a re¯ectivity of about 80% at 10.6 lm wavelength [9].…”

Section: Methodsmentioning

confidence: 98%

“…A pulse of visible light absorbed on the surface of a semiconductor can generate a transient electron±hole plasma due to the promotion of electrons from the valence to the conductance band. The plasma carrier density necessary for signi®cant (>70%) mid-IR re¯ectivity can be obtained with visible pumping levels well below the damage threshold of semiconductor materials [9]. (The lifetime of the photo-induced re¯ectivity can vary in a ps±ns range depending on the dimensions of the visible light absorption zone, the IR wavelength, and the properties of the semiconductor material [9].)…”

Section: Principlementioning

confidence: 99%

“…The plasma carrier density necessary for signi®cant (>70%) mid-IR re¯ectivity can be obtained with visible pumping levels well below the damage threshold of semiconductor materials [9]. (The lifetime of the photo-induced re¯ectivity can vary in a ps±ns range depending on the dimensions of the visible light absorption zone, the IR wavelength, and the properties of the semiconductor material [9].) As the dimensions of such a transient mirror are determined by the size of the visible light spot, it can generate a``point'' source of IR light on the surface of a semiconductor as shown in Fig.…”

Section: Principlementioning

confidence: 99%

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Fast IR imaging with sub-wavelength resolution using a transient near-field probe

Palanker

Knippels

Smith

et al. 1998

Nuclear Instruments and Methods in Physics Research Section B:

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We present a method for the remote generation of a transient near-®eld probe using conventional IR microscopy optics. Photo-induced re¯ectivity generated by picosecond pulses of visible light incident on the surface of a semiconductor substrate is used to create transient mirrors with dimensions determined by the spot size of the visible light. The IR light scattered by such sub-wavelength-size mirror is collected after propagating through the sample. As the sample is located on the semiconductor substrate, no near-®eld distance control is required, and the image can be taken at the speed of typical laser scanning microscope. And since the near-®eld probe is generated remotely ± using light ± the sample to be imaged can be covered by, or encased in, a transparent liquid or solid. The resolution of such an IR microscope is determined by the dimensions of the transient mirror, i.e., by the spot size of the visible light and its penetration depth into the substrate. To prevent resolution degradation due to diusion of the photo-excited carriers in the substrate, the probe (IR) pulse duration should not exceed a few tens of picoseconds. Ó

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Section: Methodsmentioning

confidence: 93%

Section: Methodsmentioning

confidence: 98%

Section: Principlementioning

confidence: 99%

Section: Principlementioning

confidence: 99%

See 2 more Smart Citations

Fast IR imaging with sub-wavelength resolution using a transient near-field probe

Palanker

Knippels

Smith

et al. 1998

Nuclear Instruments and Methods in Physics Research Section B:

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Temporal and spatial investigation of 6 H-SiC by picosecond pulse excitation

Galeckas¹,

Petrauskas²,

Bergner³

et al. 1995

Phys. Stat. Sol. (a)

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Sensitive linear and nonlinear optical methods of picosecond transient reflectivity, fluorescence, and second harmonic generation in reflection are applied for spatial and temporal characterization of 6HSiC. Two different substrate crystals grown by the Lely method and a 5 μm thick layer grown by liquid phase epitaxy are tested. High spatial resolution time‐resolved measurements reveal a significant variation of the effective carrier lifetime on a nanosecond time scale, related to the random distribution of crystal imperfections. Second harmonic generation (SHG) in reflection measurements reveals pronounced structural and crystalline quality differences of the tested samples. The roles of nonequilibrium carrier radiative, nonradiative, and enhanced surface recombination processes are discussed on the basis of the experimental data.

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Reflectivity and Dynamic Gratings in Implanted Si Induced by Picosecond Laser Pulses

Galeckas

Netiksis

Petrauskas

1988

Physica Status Solidi (b)

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The relaxation processes are investigated in high-excited ion-implanted silicon using transient-reflectivity and dynamic grating methods in the picosecond time domain. The dependences of the optical parameters of ion-implanted Si versus implantation dose are presented. The temporal behaviour of the non-equilibrium charge carriers obtained from the induced-reflectivity change and grating decay measurements is analysed. Tho reflectivity decay procees is found to be always faster than the corresponding grating decay process. By the numerical calculations the surface recombination velocity is estimated to AS = 4 x lo4 cmls. The influence of the implantation process on the effectivo carrier lifetime is discussed.Frequency properties of semiconductor devices are mainly determined by the lifetime of non-equilibrium charge carriers (NCC). Applying ion-implantation technology the lifetime of NCC can be controlled in a wide range of time scale [l to 51. The exact influence of ion implantation on the behaviour of Si substrate NCC system is still unknown.I n this paper some experimental results are presented regarding the relaxation processes in high-excited ion-implanted silicon using transient reflectivity and dynamic grating methods. The used well-known excite and probe techniques are based on the generation of free carriers by a laser pulse (Aex = 0.53 pm, zi = 25 ps) and the test of the photoinduced optical properties by a time-delayed probe pulse (A, = 1.06 pm, zi = 30 ps). Dynamic gratings are induced by two identical doublefrequency picosecond pulses of a Nd:YAG laser with angle of intersection 0 = 2.6" and energy density I = 10-2 J/cma. The diameters of the pump and probe beams are d,, = 0.3 mm and d,, = 0.1 mm, respectively.In our time-resolved reflectivity measurements the strong second-harmonic pulse and the attenuated fundamental one act as excitation and probe pulses, their diameters correlate as 10: 1, respectively. The excitation pulse is perpendicularly incident on 1) Sauletekio al. 9-3, SU-292054 Vilnius, USSR.

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On the investigation of laser-induced carriers in silicon in the picosecond time range

Cited by 9 publications

References 5 publications

Fast IR imaging with sub-wavelength resolution using a transient near-field probe

Fast IR imaging with sub-wavelength resolution using a transient near-field probe

Temporal and spatial investigation of 6 H-SiC by picosecond pulse excitation

Reflectivity and Dynamic Gratings in Implanted Si Induced by Picosecond Laser Pulses

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