An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

Li, Wenbo; Zhao, Jijun; Wang, Dejun

doi:10.1016/j.ssc.2014.12.020

Cited by 24 publications

(12 citation statements)

References 39 publications

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“…The difference between the calculated and REELS bandgap of BeO film is due to the error bars that occur between the analysis methods. The energy bandgap of ALD BeO (8.3 eV) clearly exceeds that of ALD Al 2 O 3 (∼6.5–7 eV) , although it is comparable to that of thermal SiO 2 (∼9.0 eV). , The energy distribution of interface defects is shown in Figure b. The sp 2 -bonded carbon clusters act as interface traps when valence electrons are emitted.…”

Section: Resultsmentioning

confidence: 95%

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Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Lee

Jang

Jung

et al. 2019

ACS Appl. Electron. Mater.

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A crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were used as key precursors. The growth rate of BeO corresponded to 0.8 Å/cycle over the temperature range of 150–200 °C. Transmission electron microscopy and X-ray diffraction of BeO/4H-SiC demonstrated that wurtzite BeO (0002) was grown on 4H-SiC (0001) substrate. The average crystallite sizes of BeO were 15–16 nm, and the compressive strain was applied to the BeO film in the out-of-plane direction. The band alignment and interface defects of BeO/4H-SiC were determined by using internal photoemission spectroscopy (IPE), ultraviolet photoelectron spectroscopy (UPS), and reflection electron energy loss spectroscopy (REELS). The conduction band offset (CBO), valence band offset (VBO), and energy bandgap of 4H-SiC and BeO corresponded to 2.28 ± 0.1 eV, 2.53 ± 0.01 eV, 3.16 ± 0.1 eV, and 8.3 ± 0.05 eV, respectively. The calculated bandgap (7.97 eV) of a thin BeO film was obtained from the sum of CBO (2.28 eV), VBO (2.53 eV), and the SiC bandgap (3.16 eV). The difference between the calculated (7.97 eV) and REELS (8.3 eV) bandgaps of BeO film is due to the error bars between the analysis methods. Interface defect levels, as determined via IPE analysis, corresponded to 3.53 ± 0.1 eV (graphitic carbon) and 4.46 ± 0.1 eV (π-bonded carbon) and were formed during the ohmic annealing process.

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Section: Resultsmentioning

confidence: 95%

“…42,43 although it is comparable to that of thermal SiO 2 (∼9.0 eV). 44,45 The energy distribution of interface defects is shown in Figure 8b. The sp 2 -bonded carbon clusters act as interface traps when valence electrons are emitted.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Lee

Jang

Jung

et al. 2019

ACS Appl. Electron. Mater.

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“…Theoretical studies using first-principles calculations have been carried out by several authors [6][7][8][9][10][11][12][13][14][15][16][17] to address this issue. Knaup et al reported that a carbon interstitial defect [carbonyl group-like structure; see Fig.…”

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Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO₂ interface

Kaneko

Tajima

Yamasaki

et al. 2017

Appl. Phys. Express

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“…14) However, to explain the observed locally induced anomalous lattice strain in the surface region of SiC, we may take into account the effects of defect generation in SiC as the dominant cause. Various types of possible defects, including carbon dimers (Si 2 -C=C-Si 2 ) 18) and carbon di-interstitials 19) located in the SiC surface region, could be considered as the origin of the lattice distortion. In addition, the formation of a remarkable amount of C¸O structures in the near-interface region, which was detected by an infrared spectroscopy study 20) and is attributed to oxygen invasion into the surface region of SiC during the thermal oxidation process, is another possible source of the locally induced defective structure in the surface region of 4H-SiC.…”

Section: Hmentioning

confidence: 99%

Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry

Hatmanto

Kita

2017

Appl. Phys. Express

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Local lattice distortions at the surface of 4H-SiC(0001) after various thermal oxidation processes were investigated by in-plane X-ray diffractometry. Our results showed that dry oxidation induced lattice distortion, observed as the increase of ð1 100Þ interplanar spacing, became higher with increasing oxidation time. Lattice constant changes of up to >0.4% were observed by increasing the oxide thickness to 44 nm. This lattice distortion was not recovered after removal of the SiO 2 layer by chemical etching, although it was partially reduced by Ar gas annealing, suggesting that strain relaxation requires removal of oxidation-induced defects in the 4H-SiC surface region.

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An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

Cited by 24 publications

References 39 publications

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO₂ interface

Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry

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An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

Cited by 24 publications

References 39 publications

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO2 interface

Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry

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Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO₂ interface