2013
DOI: 10.1016/j.jeurceramsoc.2012.07.038
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An analysis of deformation mechanism in the Si3N4–AgCuTi+SiCp–Si3N4 joints by digital image correlation

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Cited by 33 publications
(9 citation statements)
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References 32 publications
(30 reference statements)
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“…From the EDS maps of Figure D,E, both Si‐rich and Sn‐rich layer overlapped Ti‐rich reaction layer at the interface. The results demonstrated that Ti–O, Ti–Si, Ti–C, or Ti–Si–C and Sn–Ti compounds might be formed at the interface, which were beneficial to improve the wettability of SAC filler on SiC ceramics.…”
Section: Resultsmentioning
confidence: 96%
“…From the EDS maps of Figure D,E, both Si‐rich and Sn‐rich layer overlapped Ti‐rich reaction layer at the interface. The results demonstrated that Ti–O, Ti–Si, Ti–C, or Ti–Si–C and Sn–Ti compounds might be formed at the interface, which were beneficial to improve the wettability of SAC filler on SiC ceramics.…”
Section: Resultsmentioning
confidence: 96%
“…4bec shows the SADPs of the Si 3 N 4 ceramic and TiN grain. The orientation relationship between Si 3 N 4 and TiN deduced from the SADPs is (1 1 1 [18,19] also reported the TiN nanocrystal shared a coherent orientation relationship with the Si 3 N 4 ceramic in the brazing of Si 3 N 4 .…”
mentioning
confidence: 83%
“…При этом данные эффекты наблюдаются в малом приповерхностном слое толщиной не более 100-500 нм [11,12]. В свою очередь точная информация о процессах взаимодействия налетающих ионов со структурой материала, а также последующих за этим фазовых превращениях необходима как для фундаментальных исследований, так и прогнозирования радиационной стойкости конструкционных материалов подверженных радиации [13][14][15].…”
Section: Introductionunclassified