An analysis of false turn-on mechanism on high-frequency power devices

Ishibashi, H.; Nishigaki, Akihiro; Umegami, Hirokatsu; Martínez, Wilmar; Yamamoto, Masaaki

doi:10.1109/ecce.2015.7309976

Cited by 30 publications

(6 citation statements)

References 19 publications

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“…Oscillations get more severe in the discrete package due to the high parasitic inductance of the package and printed circuit board (PCB). These oscillations have adverse effects on the convert performance such as additional power losses (Abou-Alfotouh et al, 2006;Chen, 2009;Mermet-Guyennet et al, 2012;Chen, 2014;Nayak et al, 2014;Dong et al, 2015;Jahdi et al, 2015;Liang et al, 2019;Meng et al, 2019), increased EMI noise (Gong et al, 2013;Tsai et al, 2013;Zare et al, 2015;Fang et al, 2017;Zhang et al, 2019;Zhang and Wang, 2020), shoot through (Elbanhawy, 2005;Watanabe and Itoh, 2011;Xu et al, 2013;Yanagi et al, 2014;Zhang Z. et al, 2014;Ishibashi et al, 2015;Yin et al, 2016;Wang et al, 2018) and overshoots in current and voltage (Gamand et al, 2012;Joko et al, 2015;Ando and Wada, 2017;Liang et al, 2017).…”

Section: Switching Oscillation Challengementioning

confidence: 99%

“…Both of them may lead to a shoot-through issue. The shoot-through current deteriorates the performance, increases switching losses, and can even damage the devices (Elbanhawy, 2005;Watanabe and Itoh, 2011;Xu et al, 2013;Yanagi et al, 2014;Zhang Z. et al, 2014;Ishibashi et al, 2015;Fan et al, 2016;Yin et al, 2016;Wang et al, 2018). The difference between false turnon and false triggering lies in single and repeated trigger action.…”

Section: Gate To Source Voltage Oscillations and Underlying Mechanismmentioning

confidence: 99%

“…The difference between false turnon and false triggering lies in single and repeated trigger action. The false turn-on is mainly related with the high d]/dt and di/dt in WBG devices (Khanna et al, 2013;Wang and Chung, 2014;Yanagi et al, 2014;Ishibashi et al, 2015;Jahdi et al, 2015; Wang If the voltage drop is higher than the device threshold voltage, a false turn-on event would occur leading to shoot-through. Typically, the duration for a false turn-on is between 10 and 100 nsec (Yin et al, 2016) and the value of current can reach up to 150 A (Yanagi et al, 2014).…”

Section: Gate To Source Voltage Oscillations and Underlying Mechanismmentioning

confidence: 99%

See 2 more Smart Citations

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

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Section: Switching Oscillation Challengementioning

confidence: 99%

Section: Gate To Source Voltage Oscillations and Underlying Mechanismmentioning

confidence: 99%

Section: Gate To Source Voltage Oscillations and Underlying Mechanismmentioning

confidence: 99%

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Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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“…The effects of parasitics have been studied focusing on resonances and self-sustained oscillations [2][3][4]. These are more pronounced for GaN circuits due to its complex structures and operation at high frequency and current levels [5]. Thus, it is imperative that power application designers have an idea about how to evaluate the effects of these parasitics when switching at very high speeds.…”

Section: Introductionmentioning

confidence: 99%

An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

et al. 2020

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This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.

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“…However, SiC MOSFETs are prone to oscillations during switching because of the coupling effects between the variation of drain current (d I D /d t ) and the parasitic inductances from the package design of the power module, which results in voltage overshoot [5, 6], false turn‐on and unreliability [7, 8], and even damage to the devices [9]. With the development of the packaging technology, parasitic inductances are becoming increasingly small, but it cannot be avoided.…”

Section: Introductionmentioning

confidence: 99%

Analysis of SiC MOSFET d I /d t and its temperature dependence

Liao

et al. 2018

IET Power Electronics

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A change regulation of variation in drain current (dI D /dt) of silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs) and their temperature dependencies are examined. Experimental results show that the magnitude of turn-off dI D /dt decreases with temperature and turn-on dI D /dt increases with increasing temperature. Further analysis shows that turn-on dI D /dt is better than turn-off dI D /dt in terms of temperature dependency and exhibits good linearity. This behaviour results from the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in the SiC MOSFET. Other factors that affect the temperature dependency of dI D /dt, such as supply voltage, load current, and gate resistance, are also discussed. A temperature-based analytical model of dI D /dt for the SiC MOSFET is derived using fundamental device physics equations. The calculations generally fit the measurements well. These results are beneficial since they provide a potential approach for junction temperature estimation in the SiC MOSFET. In SiC MOSFET-based practical applications, if turn-on dI D /dt is sensed, then the junction temperature can be derived from the relationship curve of turn-on dI D /dt versus temperature drawn experimentally in advance. 2 Temperature dependency characterisation of variation in drain current 2.1 Overview of the turn-on and turn-off process The typical structure of a 1200 V SiC MOSFET that consists of electrodes, gate oxide, junction field-effect transistor (JFET)

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An analysis of false turn-on mechanism on high-frequency power devices

Cited by 30 publications

References 19 publications

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

Analysis of SiC MOSFET d I /d t and its temperature dependence

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