2005
DOI: 10.1007/s10854-005-6598-1
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An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon

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Cited by 12 publications
(1 citation statement)
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“…Through a fit with the PECVD a-Si: H joint density-of-states ͑JDOS͒ experimental results of Jackson et al, 16 O'Leary 17 found that N vo = 2.38 ϫ 10 22 cm −3 eV −3/2 , N co = 2.38ϫ 10 22 cm −3 eV −3/2 , Table I, for the purposes of this analysis, noting that other selections for the PECVD a-Si: H DOS modeling parameters could have been made. [25][26][27] The resultant valence-band and conduction-band DOS functions, corresponding to this particular selection of DOS modeling parameters, are depicted in Fig. 1͑a͒.…”
Section: Modeling the Optical-absorption Spectrum Associated Witmentioning
confidence: 99%
“…Through a fit with the PECVD a-Si: H joint density-of-states ͑JDOS͒ experimental results of Jackson et al, 16 O'Leary 17 found that N vo = 2.38 ϫ 10 22 cm −3 eV −3/2 , N co = 2.38ϫ 10 22 cm −3 eV −3/2 , Table I, for the purposes of this analysis, noting that other selections for the PECVD a-Si: H DOS modeling parameters could have been made. [25][26][27] The resultant valence-band and conduction-band DOS functions, corresponding to this particular selection of DOS modeling parameters, are depicted in Fig. 1͑a͒.…”
Section: Modeling the Optical-absorption Spectrum Associated Witmentioning
confidence: 99%