An analysis of the impact of native oxide, surface contamination and material density on total electron yield in the absence of surface charging effects

Iida, S.; Ohya, Kaoru; Hirano, Ryoichi; Watanabe, Hidehiro

doi:10.1016/j.apsusc.2016.04.143

Cited by 4 publications

(5 citation statements)

References 50 publications

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“…The shape and peak position of the energy distribution is material dependent, which is related to differences in the energy barrier for secondary electron emission. [15][16][17] Photon energy-dependent quantitative measurements of the total SEY show that the SEY of Ru can be explained by photons absorbed in the topmost nanometer of native oxide on top of the thin film. This is a consequence of the short attenuation length of about 0.25 nm for photo-and secondary electrons in the studied energy range, which is roughly an order of magnitude less than the attenuation length of EUV photons.…”

Section: Discussionmentioning

confidence: 99%

“…17 This will also lower the barrier for secondary electron emission and make the energy distribution more narrow with a peak at lower kinetic energy. 15 For both the unbiased and biased cases, the kinetic energy of the peak maximum and width of the secondary electron distribution are highest for the RuO x . However, the kinetic energy peak maximum and width for SnO x is greater than that for HfO 2 only in the unbiased case.…”

Section: Secondary Electron Energy Distributionmentioning

confidence: 95%

“…The metallic characteristics can be assigned to the very small thickness of the native oxide and/or the conductive nature of RuO 2 . 14,15 The HfO 2 and SnO x samples show a band gap: the highenergy on-set of the photoelectron spectrum is significantly below 0 eV binding energy. The measured position of the Hf4f 7∕2 peak in the case of the HfO 2 sample was 18.4 eV, identical to the precharacterization with the laboratory XPS.…”

Section: Secondary Electron Measurementsmentioning

confidence: 99%

“…This charge may attract electrons from below the surface and thereby enhance the emission of secondary electrons. 15,16 Alternatively, it has been demonstrated that under conditions for photoelectron emission, downward band bending can occur in (high bandgap) semiconductors, as schematically indicated in Fig. 3(a).…”

Section: Secondary Electron Energy Distributionmentioning

confidence: 99%

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Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Sturm

Liu

Darlatt

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination. Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide. Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide. Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials. Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO 2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

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Section: Discussionmentioning

confidence: 99%

Section: Secondary Electron Energy Distributionmentioning

confidence: 95%

Section: Secondary Electron Measurementsmentioning

confidence: 99%

Section: Secondary Electron Energy Distributionmentioning

confidence: 99%

See 2 more Smart Citations

Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Sturm

Liu

Darlatt

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

show abstract

“…Although the total electron yield (TEY) is less commonly used compared to the transmission or fluorescence X-ray absorption spectroscopy (XAS) techniques [14][15][16], it offers unique advantages in its sensitivity to surface properties and ability to provide detailed information about the valence state, local symmetry, and spatial distribution of atoms in a material. TEY is particularly suitable for studying thin films, surface engineering, corrosion, energy storage, electrocatalysis, and semiconductors [17,18].…”

Section: Measurement Of Crystalline Zr 60 Cu 20 Fe 20 Alloymentioning

confidence: 99%

Demonstration of Sensitivity of the Total-Electron-Yield Extended X-ray Absorption Fine Structure Method on Plastic Deformation of the Surface Layer

Oroszová,

Saksl,

Csík

et al. 2024

Coatings

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X-ray Absorption Fine Structure Spectroscopy (XAFS) has proven instrumental for the study of atomic-scale structures across diverse materials. This study conducts a meticulous comparative analysis between total electron yield (TEY) and absorption coefficients at the K absorption edge of polycrystalline Fe and Zr60Cu20Fe20 alloy. Our findings not only highlight differences between TEY and transmission XAFS measurements but also demonstrate the capabilities and limitations inherent in these measurement modes within the context of XAFS. This article provides an experimental exploration of widely used X-ray absorption spectroscopy methods, shedding light on the nuances of TEY and transmission XAFS. Through presenting experimental results, we aim to offer insights crucial to the material science community, guiding experimentalists in optimizing measurements while raising awareness about potential misinterpretations.

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Optimized structure of standard sample with programed defects for pattern inspection using electron beams

Iida

Uchiyama

2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Standard samples with programed defects, designed to evaluate pattern inspection tools that use electron beams, were fabricated on 12-in. Si wafer. By using a structure with a conductive pattern on an insulator layer, scanning electron microscope (SEM) images with various pattern contrasts, depending on the charging effect, were obtained under different observation conditions. The impact of captured-image contrast on defect detection capability was examined using different types of inspection algorithm. It was found that the accuracy of critical dimension measurement, effectiveness of the charge suppression technique, and defect detection capability of the SEM tool, and its robustness could all be evaluated using this standard sample with a particular stacked structure.

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An analysis of the impact of native oxide, surface contamination and material density on total electron yield in the absence of surface charging effects

Cited by 4 publications

References 50 publications

Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Demonstration of Sensitivity of the Total-Electron-Yield Extended X-ray Absorption Fine Structure Method on Plastic Deformation of the Surface Layer

Optimized structure of standard sample with programed defects for pattern inspection using electron beams

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