One of the main difficulties for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the synthesis of active, stable and cost-effective photoelectrodes that ensure high performance. Here we report the development of a CuO-based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs. SCE at pH 9, which implies an overpotential of only 75 mV, and high stability above 10 hours. The photoanodes have been fabricated by sputtering a thin film of Cu 0 on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as: (i) protective layer to avoid the corrosion of nSi, (ii) p-type hole conducting layer for efficient charge separation and transportation, and (iii) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion