An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS

Chung, Seung Ah

doi:10.1109/16.841233

Cited by 38 publications

(10 citation statements)

References 6 publications

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“…When the potential wells are filled with holes, m/2 -1 electric field peaks vanish because of Eq. (15). Therefore, there are only m/2 electric field peaks left in a steady state, as illustrated in Fig.…”

Section: Resultsmentioning

confidence: 94%

Analytical model for high-voltage SOI device with composite-kdielectric buried layer

Fan¹,

Zhang²,

Luo³

et al. 2013

J. Semicond.

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An analytical model for a novel high voltage silicon-on-insulator device with composite-k (relative permittivity) dielectric buried layer (CK SOI) is proposed. In this structure, the composite-k buried layer is composed by alternating Si 3 N 4 and low-k (k D 2.65) dielectric in the lateral direction. Due to the composite-k buried layer, the breakdown voltage (BV) is improved both by the vertical and lateral direction. Taking the modulation effect of accumulated interface holes into account, an analytical model is developed. In the blocking state, the proposed model revealed the mechanism of hole accumulation above the Si 3 N 4 buried layer and investigated the modulation effect of accumulated holes on the two-dimensional (2-D) potential and electric field distributions. This analytical model is verified by the simulation results. Compared with the low-k dielectric buried layer SOI (LK SOI), simulation results show that the BV for CK SOI is enhanced by 21% and the specific on-resistance is reduced by 32%, respectively.

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Section: Resultsmentioning

confidence: 94%

Analytical model for high-voltage SOI device with composite-kdielectric buried layer

Fan¹,

Zhang²,

Luo³

et al. 2013

J. Semicond.

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“…To obtain an idealized electric field, we assume that E(0,0) = E(L d ,0) and that the doping profile satisfies the following equation: In this case, the related breakdown voltage can be obtained by equating Eq. (16) and (17), yielding:…”

Section: Resurf Criterionmentioning

confidence: 99%

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Yang

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV) concept is proposed so that the derivation of electric field and breakdown voltage can be simplified significantly. The ESV indicates that the influence of 2-D doping in the drift region can be equivalent to a virtual substrate potential. By using the proposed model, the role of 2-D drift doping, both continuous or discrete doping profile, in SOI LDMOSs' off-state breakdown behavior is investigated along with the TCAD simulations and experimental results. The good agreement between the analytical, measured and simulated results validates the accuracy of the developed model. A unified RESURF criterion is derived to idealize the electric field in the drift region and therefore maximize the breakdown voltage by optimizing the lateral and vertical drift doping profiles and geometric parameters. The proposed approach provides a universally applicable tool to explore the breakdown mechanism of SOI LDMOS with various drift doping profiles. INDEX TERMS LDMOS, arbitrary doping profile, electric field, breakdown voltage (BV).

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“…In the τ-plane, the potential solution ψ k (u, v) in Eq. ( 5) could be approximated by a parabolic function as [33] ψ…”

Section: Model Of Trench Mosfetmentioning

confidence: 99%

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*

Wang¹,

Liao²,

Wang³

2019

Chinese Phys. B

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A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

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An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS

Cited by 38 publications

References 6 publications

Analytical model for high-voltage SOI device with composite-kdielectric buried layer

Analytical model for high-voltage SOI device with composite-kdielectric buried layer

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*

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