An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

Goharrizi, Arash Yazdanpanah; Pourfath, Mahdi; Fathipour, Morteza; Kosina, H.; Selberherr, S.

doi:10.1109/ted.2011.2163719

Cited by 34 publications

(24 citation statements)

References 31 publications

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“…In particular, even though the conductance oscillation is similarly observed in both cases, the effect in the metallic systems (see Fig.4b for the perfect edge case) is relatively weaker than the one observed in the semiconducting GNRs (see Fig.2a for θ B = 30 • ). Next, the effects of edge disorder, which are practically inevitable and known to degrade strongly the transport properties of GNRs [68][69][70][71][72][73][74][75][76][77][78], have to be evaluated. In this work, disorder is modeled (see the details in [63]) either by a Gaussian autocorrelation function (presented in Fig.4) or by randomly removing the edge atoms.…”

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confidence: 99%

Stepped graphene-based Aharonov–Bohm interferometers

Nguyễn¹,

Charlier²

2019

2D Mater.

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Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such as quantum point contacts, anti-dots and p-n junctions. Based on a theoretical investigation of the magnetotransport in stepped graphene, a new kind of Aharonov-Bohm interferometers is proposed herewith. Indeed, when a strong magnetic field is applied in a proper direction, oppositely propagating edge states can be achieved in both terrace and facet zones of the step, leading to the interedge scatterings and hence strong Aharonov-Bohm oscillations in the conductance in the quantum Hall regime. Taking place in the unipolar regime, this interference is also predicted in stepped systems of other 2D layered materials.

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confidence: 99%

Stepped graphene-based Aharonov–Bohm interferometers

Nguyễn¹,

Charlier²

2019

2D Mater.

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“…For example, the GNR width (W GNR ) and gate voltage, (V G ) are mostly studied in the range of 10-150 nm and 10-50 V, respectively [48][49][50]. Therefore, we have validated the accuracy of our developed analytical model against the device-level atomistic numerical simulation based on NEGF formalism as described for ideal GNR FET in [22] and for GNR FET with line-edge roughness in [46]. Figure 6a,b shows the I DS -V GS characteristic of GNR FETs with three different GNR indices of N = 6, 12 and 18 for drain voltages of 0.1 V and 0.5 V, respectively.…”

Section: Model Validationmentioning

confidence: 93%

“…The edge disorder has been analytically modeled by Anderson distribution in [43] assuming that atoms at the edges are randomly removed with uniform probability, such that the correlation between edge disorders has been neglected. As line-edge roughness is a statistical phenomenon, a more realistic model needs an autocorrelation function as have been already used for modeling Si/SiO 2 interface roughness [44] and the line-edge roughness in GNRs [45,46]. In this paper, we consider an exponential spatial autocorrelation function as follows:…”

Section: Non-ballistic Transportmentioning

confidence: 99%

“…The line-edge roughness causes fluctuations in the edge potential and bandgap modulation due to the localized edge states as shown in Figure 4a. The decrease in the conductivity of narrow GNRs as a result of line-edge roughness can be incorporated by introducing the effective bandgap in the transport calculation corresponding to the LER scattering-limited MFP as follows [46]:…”

Section: Non-ballistic Transportmentioning

confidence: 99%

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Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Banadaki

Srivastava

2016

Electronics

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Abstract:In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.

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“…It is important to note that a strong resistivity suppression has not been reported in earlier publications on edgeroughness scattering in graphene ribbons. 23,27,28,30,63 . Our simulation results indicate that this effect only shows up when we calculate the relaxation times selfconsistently, considering a subband-quantized ribbon spectrum and a finite edge-roughness correlation length.…”

Section: Transportmentioning

confidence: 99%

Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness

Moors

Contino

Put

et al. 2019

Phys. Rev. Materials

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We investigate the diffusive electron-transport properties of charge-doped graphene ribbons and nanoribbons with imperfect edges. We consider different regimes of edge scattering, ranging from wide graphene ribbons with (partially) diffusive edge scattering to ribbons with large width variations and nanoribbons with atomistic edge roughness. For the latter, we introduce an approach based on pseudopotentials, allowing for an atomistic treatment of the band structure and the scattering potential, on the self-consistent solution of the Boltzmann transport equation within the relaxation-time approximation and taking into account the edge-roughness properties and statistics. The resulting resistivity depends strongly on the ribbon orientation, with zigzag (armchair) ribbons showing the smallest (largest) resistivity, and intermediate ribbon orientations exhibiting intermediate resistivity values. The results also show clear resistivity peaks, corresponding to peaks in the density of states due to the confinement-induced subband quantization, except for armchair-edge ribbons that show a very strong width dependence because of their claromatic behavior. Furthermore, we identify a strong interplay between the relative position of the two valleys of graphene along the transport direction, the correlation profile of the atomistic edge roughness, and the chiral valley modes, leading to a peculiar strongly suppressed resistivity regime, most pronounced for the zigzag orientation. *

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An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

Cited by 34 publications

References 31 publications

Stepped graphene-based Aharonov–Bohm interferometers

Stepped graphene-based Aharonov–Bohm interferometers

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness

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