An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

“…For NPT IGBTs, the extraction of N-base lifetime L  is independent of clamp voltage. For PT and FS IGBTs, a low clamp voltage extraction is needed to acquire the N-base lifetime L According to Hefner's IGBT modeling theory [7], during the turn-off transient state, the base charge decay rate is…”

“…P D is the hole diffusivity in the N-base, and T I is the total current. 0 n I in (1) is expressed as [7] 2 0 0 2…”

“…At a high current, the current decay rate also decreases because the increased rate of emitter electron current injection [7]. In the range in which the current decay rate is at its maximum, the N-base is in a high-level injection state, and the electron current injection is negligible, (4) is valid.…”

“…Although many works have explored lifetime extraction [7]- [19], most of them use the extraction theory cited in [7] to extract excess carrier lifetime for NPT IGBT models, as well as the extraction theory cited in [17] to extract excess carrier lifetime for PT or FS IGBT models. Since the significant development of IGBT transient modeling theory, especially the availability of the newly proposed expression for the transient dynamics of excess carrier distribution in the N-base [4] and the improved understanding of the transient modeling of FS layers [5], extraction methods should be modified to meet the latest developments.…”

Transmission Line Analysis of Accumulation Layer in IEGT

“…A comprehensive understanding of the electron-injection mechanism of the accumulation layer is therefore of basic importance for the device design. One-dimensional models for IGBT have been presented in literature [4], and have been used to represent IEGT. A two-dimensional model [5] describing the static and dynamic behavior of IEGT or trench IBGT has also been reported.…”