An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET

Bagga, Navjeet; Sarkar, Subir Kumar

doi:10.1109/ted.2015.2434276

Cited by 106 publications

(53 citation statements)

References 26 publications

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“…The simulation analyses have examined the different electrical parameters and their dependence on the pocket length, mole fraction of the SiGe layer, and gate voltage. An impressive on-off current ratio of >10 12 and a subthreshold swing less than 60 mV/dec are observed. An analytical model based on 2-D Poisson equation has been developed for the gate-drain underlap heterojunction TFET.…”

Section: Resultsmentioning

confidence: 99%

“…Technology Computer Aided Design (TCAD) simulation is a complex iterative mathematical process, and hence various analytical models have been proposed in order to develop a better understanding of the physics-based principles of TFETs and obtain results not constrained by computational time [11]. A number of analytical models based on Poisson equation have been proposed in the study for different geometries [12][13][14]. In this chapter, a mole fractiondependent model has been proposed and validated.…”

Section: Introductionmentioning

confidence: 99%

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Band Gap Modulated Tunnel FET

Bhowmick¹,

Goswami²

2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter presents bandgap-modulated tunnel field effect transistor (TFET) and discusses its simulation and modeling. A geometry of TFET, the heterojunction TFET, is considered, and different electrical parameters are discussed using Technology Computer Aided Design (TCAD) tool. The effect of the heterojunction on the characteristics is observed through the variations in the length and mole fraction of the pocket layer adjacent to the source. An analytical model is further presented for gate-drain underlap TFET using 2-D Poisson equation and Kane's interband tunneling model. The results are validated with the output from the TCAD tool.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Band Gap Modulated Tunnel FET

Bhowmick¹,

Goswami²

2018

Design, Simulation and Construction of Field Effect Transistors

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show abstract

“…As an important parameter for evaluating the semiconductor devices simulation performance, the trans-conductance value is related to the transfer characteristics. The trans-conductance can be calculated by the first derivative of transfer characteristic [23], and the specific expression is shown in formula (1).…”

Section: The Transfer and Output Characteristics Analysismentioning

confidence: 99%

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

et al. 2020

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The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be greatly improved. Different from the traditional DLTFETs, the source region and pocket region of the doping-less TFET with the Ge/SiGe/Si hetero-junction and hetero-gate dielectric (H-DLTFET), respectively, use the narrow band-gap semiconductor Ge and SiGe materials, and the channel and drain region both use the silicon material. The H-DLTFET device use the Ge/SiGe hetero-junction engineering to decrease the tunneling barrier width, increase the band-to-band tunneling current, and obtain the higher current switching ratio and ultra-low sub-threshold swing (SS). Besides, the gate dielectric under auxiliary gate uses the low-k dielectric SiO2 material, which can effectively reduce the miller capacitance and improve the capacitance and frequency characteristics. The on-state current, switching ratio, trans-conductance, output current, and output conductance values of H-DLTFET can be increased by two, two, one, one, and one order of magnitude when compared with the DLTFET, respectively. Meanwhile, the point SS and average SS, respectively, decrease from 13 mV/Dec and 31.6 mV/Dec to 5 mV/Dec and 14.3 mV/Dec, and the gate-drain capacitance decrease from 0.99 fF/μm to 0.1 fF/μm. Besides, the cutoff frequency and gain bandwidth product of H-DLTFET are much larger than that of DLTFET, which can be explained by the excellent DC characteristics. The above simulation results show that the H-DLTFET has the better frequency characteristics, so it is more suitable for applications of ultra-low-power integrated circuits.

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“…A DLTFET can form heavily doped source and drain regions using the appropriate metal electrode work functions. Due to the absence of an abrupt junction, the fabrication processes of DLTFETs are simpler, and random doping fluctuations have no effect on device performance [20][21][22]. Therefore, it is possible to produce DLTFET devices more innovatively with the development of fabrication processes, such as the etching process, epitaxial growth process, and atomic layer deposition (ALD) process.…”

Section: Introductionmentioning

confidence: 99%

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

et al. 2019

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In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium and Si0.6Ge0.4 are used as source and channel materials, respectively, to provide higher carrier mobility and smaller tunneling barrier width. The energy band and charge carrier tunneling efficiency of the tunneling junction become steeper and higher as a result of the Si0.6Ge0.4 heterojunction. In addition, the effects of the source work function, gate oxide dielectric thickness, and germanium content on the performance of the H-DLTFET are analyzed systematically, and the below optimal device parameters are obtained. The simulation results show that the performance parameters of the H-DLTFET, such as the on-state current, on/off current ratio, output current, subthreshold swing, total gate capacitance, cutoff frequency, and gain bandwidth (GBW) product when Vd = 1 V and Vg = 2 V, are better than those of conventional silicon-based DLTFETs. Therefore, the H-DLTFET has better potential for use in ultra-low power devices.

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An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET

Cited by 106 publications

References 26 publications

Band Gap Modulated Tunnel FET

Band Gap Modulated Tunnel FET

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

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