An analytical study of platinum silicide formation

Bindell, J. B.; Colby, J. W.; Wonsidler, D. R.; Poate, J. M.; Conley, D.K.; Tisone, T. C.

doi:10.1016/0040-6090(76)90612-x

Cited by 56 publications

(5 citation statements)

References 8 publications

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“…Ta-Si AI-Si Ti-Si Au-Si Cr-Si Bindell et al 1976Croset and Velasco 1972Liebl 1975Ponpon et al 1978Whatley et al 1976Morabito and Rand 1974 Others Authors…”

Section: Pt-simentioning

confidence: 99%

Depth profiling by secondary ion mass spectrometry

Zinner¹

1980

Scanning

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The principles and applications of depth profiling by secondary ion mass spectrometry (SIMS) are reviewed. Discussed are the basic physical processes and instrumental factors which influence the shape of depth profiles and which have to be understood or controlled for successful experimental measurements. Microroughness caused by sputtering, atomic mixing by primary beam knock‐on, and sample consumption limit the depth resolution which can be achieved while the chemical effect of ion yield enhancement by reactive species, matrix effects, and preferential sputtering can strongly affect the secondary ion signal. Instrumental effects to be controlled include beam uniformity, sample charging, and beam, and residual gas contamination. High depth resolution and sensitivity are the reasons for a wide variety of applications for SIMS depth profiling. Reviewed are measurements of the range distribution of ions implanted into semiconductors and their redistribution by subsequent annealing, studies of thin films and of oxide layers, diffusion measurements in metals, semiconductors, and minerals, measurements of elemental surface enhancements in airborne particles, and lunar glass spherules, and the search for solar wind implanted ions in lunar crystals.

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“…Ta-Si AI-Si Ti-Si Au-Si Cr-Si Bindell et al 1976Croset and Velasco 1972Liebl 1975Ponpon et al 1978Whatley et al 1976Morabito and Rand 1974 Others Authors…”

Section: Pt-simentioning

confidence: 99%

Depth profiling by secondary ion mass spectrometry

Zinner¹

1980

Scanning

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“…Unfortunately, low energy ions severely damage the surface being investigated. 23 " 27 These effects are particularly important at interfaces or phase boundaries and lead to artifactual broadening and the introduction of new chemical species. In addition to oxide reduction, energy injected into the oxide can cause substantial network damage, increasing defects and strongly changing the network ring and angle statistics.…”

Section: Fundamental Considerationsmentioning

confidence: 99%

Fundamentals of X-Ray Photoemission Spectroscopy

Grunthaner¹

1987

MRS Bull.

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Rapid progress in the development of new electronic materials and the steady maturation of silicon-based technologies has resulted in a host of novel electronic devices in which the active region of the structure is confined to an interface or a surface. The chemical, electronic, and physical characterization of surfaces and interfaces in semiconductors and insulators is of critical importance to manufacturing process control as well as to the fundamental electron physics and materials science which support microelectronic device research. MATERIALS LETTERS At Special MRS Member RatesAs a member of the Materials Research Society, you can subscribe to Materials Letters at a special subscription rate. Only members of MRS may receive personal subscriptions to this valuable journal.* Volume V of Materials Letters will be completed during 1987. To receive Volume V, subscribe now by completing the form below. For your convenience, you may also subscribe to Volume VI to ensure continuation of your subscription after Volume V without pause in service.'Institutional subscriptions for libraries must be obtained through the publisher. Elsevier Science Publishers B.V., Journal Department,

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“…[ 9 ] due to its propensity to easily react with Si, the material of the tip, forming silicides. [ 22 ] By sputtering, 30 nm Pt was deposited on the thermally oxidized Si tip arrays, forming CPPs with two different thicknesses of thermal SiO 2 as a diffusion barrier. These CPPs were then annealed sequentially in a vacuum furnace up to 800 °C.…”

Section: Introductionmentioning

confidence: 99%

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers

Akbarnejad,

Kostka,

et al. 2024

Adv Materials Inter

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Interactions at high temperatures between thin films and the Si substrate limit materials discovery using combinatorial processing platforms (CPPs). To overcome this, a diffusion and reaction barrier, SiO2, by thermal oxidation of Si tips is developed. The application of this diffusion barrier in CPPs for atomic‐scale investigations of new materials in atom probe tomography is reported. Thermal SiO2 layers (20 and 50 nm thick) are examined as barriers to separate coatings from Si tips. Pt is chosen as it easily forms silicides. CPPs are sequentially annealed in vacuum at 400 °C for 10 h, 600 °C for 2 h, and 800 °C for 2 h. The thermal SiO2 diffusion barrier remains stable and prevents intermixing at least up to 800 °C. Moreover, it provides improved film adhesion as dewetting of Pt on the oxide surface occurred at 800 °C instead of 600 °C without a thermal diffusion barrier. A comprehensive structural and chemical analysis of the Pt film, the thermal SiO2 layer, and their interfaces is performed using scanning and transmission electron microscopy, and atom probe tomography. As a result, the thermal SiO2 forms a stable barrier, even at the lowest thickness of 20 nm, avoiding the formation of Pt silicides, even at 800 °C.

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An analytical study of platinum silicide formation

Cited by 56 publications

References 8 publications

Depth profiling by secondary ion mass spectrometry

Depth profiling by secondary ion mass spectrometry

Fundamentals of X-Ray Photoemission Spectroscopy

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers

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An analytical study of platinum silicide formation

Cited by 56 publications

References 8 publications

Depth profiling by secondary ion mass spectrometry

Depth profiling by secondary ion mass spectrometry

Fundamentals of X-Ray Photoemission Spectroscopy

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

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Product

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Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers